Precision N-Channel EPAD® MOSFET Array

By Advanced Linear Devices, Inc. 136

Precision N-Channel EPAD® MOSFET Array

Advanced Linear Devices ALD210800A/ALD210800 precision n-channel MOSFET arrays featuring Zero-Threshold voltage establish new industry benchmarks for forward transconductance and output conductance. Designed with ALD's proven EPAD CMOS technology, the arrays allow circuit designers to build ultra-low supply voltages that were never before possible.

Benefits
  • High transconductance and output conductance
  • Low RDS(ON) of 25 Ω
  • Output current > 50 mA
  • Matched and tracked temperature coefficient
  • Tight lot-to-lot parametric control
  • Positive, zero, and negative VGS(th) temperature coefficient
  • Low input capacitance and leakage currents

Жаңа өнімдер:

ALD210800SCLALD210800ASCLALD210800APCL

Санаттар

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