Silicon Carbide Transistor advantages include low switching losses, higher efficiency, high temperature operation and high short circuit withstand capability.
By GeneSiC Semiconductor 318
Features superior surge current capability, positive temperature coefficient of Vf, superior figure of merit Qc/If and much more.
By GeneSiC Semiconductor 308
GeneSiC is offering and continuously improving innovative Silicon Carbide power rectifiers for high voltage rating applications, with significant advantages.
By GeneSiC Semiconductor 276
Silicon Carbide Power Schottky Diode feature superior surge current capability and positive temperature coefficient of Vf.
By GeneSiC Semiconductor 207
MBR40044CT, 400 A Schottky diode features high surge capability and types up to 100 V VRRM.
By GeneSiC Semiconductor 333
MBR60040CT, 600 A silicon power schottky diode features high surge capability and types up to 100 V VRRM.
By GeneSiC Semiconductor 362
1N3214 features high surge capability and types up to 600 V VRRM.
By GeneSiC Semiconductor 376