PartNumber | BSC016N03MS G | BSC016N03LSGATMA1 | BSC016N03MSGATMA1 |
Description | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | MOSFET LV POWER MOS |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TDSON-8 | TDSON-8 | TDSON-8 |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
Id Continuous Drain Current | 28 A | 100 A | - |
Rds On Drain Source Resistance | 1.6 mOhms | 1.3 mOhms | - |
Vgs Gate Source Voltage | 16 V | 20 V | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 2.5 W | 125 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | OptiMOS | OptiMOS | OptiMOS |
Packaging | Reel | Reel | Reel |
Height | 1.27 mm | 1.27 mm | 1.27 mm |
Length | 5.9 mm | 5.9 mm | 5.9 mm |
Series | OptiMOS 3M | OptiMOS 3 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 5.15 mm | 5.15 mm | 5.15 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 16 ns | 8.6 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 16 ns | 8.6 ns | - |
Factory Pack Quantity | 5000 | 5000 | - |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 42 ns | 51 ns | - |
Typical Turn On Delay Time | 31 ns | 13 ns | - |
Part # Aliases | BSC016N03MSGATMA1 BSC16N3MSGXT SP000311502 | BSC016N03LS BSC16N3LSGXT G SP000237663 | BSC016N03MS BSC16N3MSGXT G SP000311502 |
Vgs th Gate Source Threshold Voltage | - | 1 V | - |
Qg Gate Charge | - | 131 nC | - |
Forward Transconductance Min | - | 65 S | - |
Өндіруші | Бөлім № | Сипаттама | RFQ |
---|---|---|---|
Infineon Technologies |
BSC016N06NSTATMA1 | MOSFET DIFFERENTIATED MOSFETS | |
BSC016N06NS | MOSFET N-Ch 60V 100A DSON-8 OptiMOS | ||
BSC016N06NSATMA1 | MOSFET N-Ch 60V 100A DSON-8 OptiMOS | ||
BSC018NE2LS | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | ||
BSC018N04LS G | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | ||
BSC016N03MS G | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M | ||
BSC016N04LS G | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | ||
BSC016N03LSGATMA1 | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | ||
BSC017N04NS G | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | ||
BSC016N04LSGATMA1 | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | ||
BSC018N04LSGXT | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | ||
BSC016N03MSGATMA1 | MOSFET N-CH 30V 100A TDSON-8 | ||
BSC016N04LSGATMA1 | MOSFET N-CH 40V 100A TDSON-8 | ||
BSC016N06NSATMA1 | MOSFET N-CH 60V 30A TDSON-8 | ||
BSC017N04NSGATMA1 | MOSFET N-CH 40V 100A TDSON-8 | ||
BSC016N06NSTATMA1 | DIFFERENTIATED MOSFETS | ||
BSC016N03LSGATMA1 | MOSFET N-CH 30V 100A TDSON8 | ||
BSC018N04LSGATMA1 | MOSFET N-CH 40V 100A TDSON-8 | ||
BSC018NE2LSATMA1 | MOSFET N-CH 25V 100A TDSON-8 | ||
Infineon Technologies |
BSC017N04NSGATMA1 | MOSFET MV POWER MOS | |
BSC018N04LSGATMA1 | MOSFET MV POWER MOS | ||
BSC018NE2LSATMA1 | MOSFET LV POWER MOS | ||
BSC016N03MSGATMA1 | MOSFET LV POWER MOS | ||
BSC016N03LSGXT/BKN | INSTOCK | ||
BSC018N04LSGXT | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | ||
BSC016N03LSG , TDA18275A | Жаңа және түпнұсқа | ||
BSC016N03LSGATMA1 , TDA1 | Жаңа және түпнұсқа | ||
BSC016N03LSGXT | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | ||
BSC016N03MS | Transistor: N-MOSFET, unipolar, 30V, 100A, 125W, PG-TDSON-8 | ||
BSC016N03MS G | Trans MOSFET N-CH 30V 28A 8-Pin TDSON T/R (Alt: BSC016N03MS G) | ||
BSC016N03MSG | Power Field-Effect Transistor, 28A I(D), 30V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
BSC016N03MSGXT | Жаңа және түпнұсқа | ||
BSC016N04LS | 100 A, 40 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET | ||
BSC016N04LS G | Trans MOSFET N-CH 40V 31A 8-Pin TDSON EP | ||
BSC016N04LSG | 100 A, 40 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET | ||
BSC016N04LSGS | Жаңа және түпнұсқа | ||
BSC016N06NS | MOSFET N-Ch 60V 100A DSON-8 OptiMOS | ||
BSC016N06NS , TDA3629T , | Жаңа және түпнұсқа | ||
BSC016N06NSXT | Жаңа және түпнұсқа | ||
BSC017N04NS | Жаңа және түпнұсқа | ||
BSC017N04NS G | Trans MOSFET N-CH 40V 30A 8-Pin TDSON EP | ||
BSC017N04NSG | Жаңа және түпнұсқа | ||
BSC018N04LS | Жаңа және түпнұсқа | ||
BSC018N04LSG | 30 A, 40 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET | ||
BSC018N04LSG-S | Жаңа және түпнұсқа | ||
BSC018N04LSGATMA1 , TDA3 | Жаңа және түпнұсқа | ||
BSC018NE2L | Жаңа және түпнұсқа | ||
BSC018NE2LSG | Жаңа және түпнұсқа | ||
BSC018N04LS G | RF Bipolar Transistors MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | ||
BSC018NE2LS | RF Bipolar Transistors MOSFET N-Ch 25V 100A TDSON-8 OptiMOS |