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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| BSC018N04LSGATMA1 DISTI # V72:2272_06383456 | Infineon Technologies AG | Trans MOSFET N-CH 40V 30A 8-Pin TDSON EP T/R RoHS: Compliant | 25 |
|
| BSC018N04LSGATMA1 DISTI # BSC018N04LSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 40V 100A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | On Order |
|
| BSC018N04LSGATMA1 DISTI # BSC018N04LSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 40V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Temporarily Out of Stock |
|
| BSC018N04LSGATMA1 DISTI # BSC018N04LSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 40V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Temporarily Out of Stock |
|
| BSC018N04LSGATMA1 DISTI # 30224883 | Infineon Technologies AG | Trans MOSFET N-CH 40V 30A 8-Pin TDSON EP T/R RoHS: Compliant | 25 |
|
| BSC018N04LS G DISTI # SP000388293 | Infineon Technologies AG | Trans MOSFET N-CH 40V 30A 8-Pin TDSON T/R (Alt: SP000388293) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Europe - 0 |
|
| BSC018N04LSGATMA1 DISTI # BSC018N04LSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 40V 30A 8-Pin TDSON EP - Tape and Reel (Alt: BSC018N04LSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC018N04LSGATMA1 DISTI # 60R2476 | Infineon Technologies AG | MOSFET, N CH, 100A, 40V, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0015ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:-,Power RoHS Compliant: Yes | 900 |
|
| BSC018N04LS G DISTI # 726-BSC018N04LSG | Infineon Technologies AG | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 RoHS: Compliant | 8413 |
|
| BSC018N04LSGXT DISTI # 726-BSC018N04LSGXT | Infineon Technologies AG | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 0 |
|
| BSC018N04LSG | Infineon Technologies AG | 30 A, 40 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET | 65 |
|
| BSC018N04LSG | Infineon Technologies AG | 3699 | ||
| BSC018N04LSGATMA1 DISTI # 1775426 | Infineon Technologies AG | MOSFET, N CH, 100A, 40V, PG-TDSON-8 RoHS: Compliant | 962 |
|
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: BSC018NE2LSI OMO.#: OMO-BSC018NE2LSI |
MOSFET N-Ch 25V 100A TDSON-8 OptiMOS |
|
|
Mfr.#: BSC018N04LSGXT OMO.#: OMO-BSC018N04LSGXT |
MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 |
|
|
Mfr.#: BSC018N04LSGATMA1 OMO.#: OMO-BSC018N04LSGATMA1 |
MOSFET MV POWER MOS |
|
|
Mfr.#: BSC018NE2LSATMA1 OMO.#: OMO-BSC018NE2LSATMA1 |
MOSFET LV POWER MOS |
|
Mfr.#: BSC018N04LSG OMO.#: OMO-BSC018N04LSG-1190 |
30 A, 40 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET |
|
|
Mfr.#: BSC018N04LSG-S OMO.#: OMO-BSC018N04LSG-S-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: BSC018N04LSGATMA1 , TDA3 |
Жаңа және түпнұсқа |
|
|
Mfr.#: BSC018NE2LSI OMO.#: OMO-BSC018NE2LSI-1190 |
Power Field-Effect Transistor, 29A I(D), 25V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSC018NE2LSI BSC018NE2LS |
Жаңа және түпнұсқа |
|
|
Mfr.#: BSC018NE2LS OMO.#: OMO-BSC018NE2LS-317 |
RF Bipolar Transistors MOSFET N-Ch 25V 100A TDSON-8 OptiMOS |
