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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email us if you have excess stock to sell.
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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| BSC018NE2LSIATMA1 DISTI # BSC018NE2LSIATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 25V 29A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 27In Stock |
|
| BSC018NE2LSIATMA1 DISTI # BSC018NE2LSIATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 25V 29A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 27In Stock |
|
| BSC018NE2LSIATMA1 DISTI # BSC018NE2LSIATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 25V 29A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | On Order |
|
| BSC018NE2LSIATMA1 DISTI # BSC018NE2LSI | Infineon Technologies AG | Trans MOSFET N-CH 25V 29A 8-Pin TDSON EP (Alt: BSC018NE2LSI) RoHS: Compliant Min Qty: 5000 | Asia - 0 | |
| BSC018NE2LSIATMA1 DISTI # BSC018NE2LSIATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 25V 29A 8-Pin TDSON EP - Tape and Reel (Alt: BSC018NE2LSIATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC018NE2LSIATMA1 DISTI # 34AC1374 | Infineon Technologies AG | MOSFET, N-CH, 25V, 100A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0015ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power DissipationRoHS Compliant: Yes | 4867 |
|
| BSC018NE2LSI | Infineon Technologies AG | Power Field-Effect Transistor, 29A I(D), 25V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 4415 |
|
| BSC018NE2LSI DISTI # 726-BSC018NE2LSI | Infineon Technologies AG | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS RoHS: Compliant | 987 |
|
| BSC018NE2LSIXT DISTI # 726-BSC018NE2LSIATMA | Infineon Technologies AG | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS RoHS: Compliant | 0 |
|
| BSC018NE2LSI | Infineon Technologies AG | 8481 | ||
| BSC018NE2LSIATMA1 DISTI # BSC018NE2LSIATMA1 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,25V,29A,69W,PG-TDSON-8 | 5048 |
|
| BSC018NE2LSIATMA1 DISTI # 2781051 | Infineon Technologies AG | MOSFET, N-CH, 25V, 100A, TDSON RoHS: Compliant | 4867 |
|
| BSC018NE2LSIATMA1 DISTI # 2781051 | Infineon Technologies AG | MOSFET, N-CH, 25V, 100A, TDSON RoHS: Compliant | 4877 |
|
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: BSC018NE2LS OMO.#: OMO-BSC018NE2LS |
MOSFET N-Ch 25V 100A TDSON-8 OptiMOS |
|
|
Mfr.#: BSC018N04LS G OMO.#: OMO-BSC018N04LS-G |
MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 |
|
|
Mfr.#: BSC018NE2LSIXT OMO.#: OMO-BSC018NE2LSIXT |
MOSFET N-Ch 25V 100A TDSON-8 OptiMOS |
|
Mfr.#: BSC018N04LSGXT OMO.#: OMO-BSC018N04LSGXT-1190 |
MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 |
|
|
Mfr.#: BSC018NE2LSIXT OMO.#: OMO-BSC018NE2LSIXT-1190 |
MOSFET N-Ch 25V 100A TDSON-8 OptiMOS |
|
|
Mfr.#: BSC018NE2LSG OMO.#: OMO-BSC018NE2LSG-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: BSC018NE2LSI BSC018NE2LS |
Жаңа және түпнұсқа |
|
|
Mfr.#: BSC018NE2LSI QFN8 OMO.#: OMO-BSC018NE2LSI-QFN8-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: BSC018N04LS G OMO.#: OMO-BSC018N04LS-G-317 |
RF Bipolar Transistors MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 |
|
|
Mfr.#: BSC018NE2LS OMO.#: OMO-BSC018NE2LS-317 |
RF Bipolar Transistors MOSFET N-Ch 25V 100A TDSON-8 OptiMOS |