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BSC016N06NSTATMA1

BSC016N06NSTATMA1
Mfr. #:
BSC016N06NSTATMA1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET DIFFERENTIATED MOSFETS
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
BSC016N06NSTATMA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
BSC016N06NSTATMA1 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
PG-TDSON-8
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
60 V
Идентификатор - үздіксіз төгу тогы:
100 A
Rds On - ағызу көзіне қарсылық:
1.6 mOhms
Vgs th - Gate-Source шекті кернеуі:
2.1 V
Vgs - Шлюз көзі кернеуі:
10 V
Qg - қақпа заряды:
71 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
139 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Қаптама:
Ролик
Транзистор түрі:
1 N-Channel
Бренд:
Infineon Technologies
Форвард өткізгіштік - Мин:
70 S
Күз уақыты:
9 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
9 ns
Зауыттық буманың саны:
5000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
35 ns
Қосудың әдеттегі кешігу уақыты:
19 ns
Бөлім # Бүркеншік аттар:
BSC016N06NST SP001657074
Tags
BSC016N06, BSC016, BSC01, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
OptiMOS Power Transistor MOSFET N-Channel 60V 100A 8-Pin TDSON-FL T/R
***ical
Trans MOSFET N-CH 60V 31A Tape
***i-Key
DIFFERENTIATED MOSFETS
***ark
Mosfet, N-Ch, 60V, 100A, 167W, Tdson; Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0014Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 60V, 100A, 167W, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:167W; Transistor Case Style:TDSON; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:OptiMOS Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CAN N, 60V, 100A, 167W, TDSON; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0014ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.8V; Dissipazione di Potenza Pd:167W; Modello Case Transistor:TDSON; No. di Pin:8Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Бөлім № Mfg. Сипаттама Қор Бағасы
BSC016N06NSTATMA1
DISTI # V72:2272_19084605		Infineon Technologies AGBSC016N06NST4314
  • 3000:$1.2320
  • 1000:$1.3770
  • 500:$1.5209
  • 250:$1.5930
  • 100:$1.7700
  • 25:$2.0660
  • 10:$2.2950
  • 1:$2.8853
BSC016N06NSTATMA1
DISTI # V36:1790_19084605		Infineon Technologies AGBSC016N06NST0
  • 5000000:$1.0790
  • 2500000:$1.0800
  • 500000:$1.1490
  • 50000:$1.2490
  • 5000:$1.2640
BSC016N06NSTATMA1
DISTI # BSC016N06NSTATMA1CT-ND		Infineon Technologies AGDIFFERENTIATED MOSFETS
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		14918In Stock
  • 1000:$1.4525
  • 500:$1.7530
  • 100:$2.1336
  • 10:$2.6540
  • 1:$2.9500
BSC016N06NSTATMA1
DISTI # BSC016N06NSTATMA1DKR-ND		Infineon Technologies AGDIFFERENTIATED MOSFETS
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		14918In Stock
  • 1000:$1.4525
  • 500:$1.7530
  • 100:$2.1336
  • 10:$2.6540
  • 1:$2.9500
BSC016N06NSTATMA1
DISTI # BSC016N06NSTATMA1TR-ND		Infineon Technologies AGDIFFERENTIATED MOSFETS
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		5000In Stock
  • 5000:$1.2643
BSC016N06NSTATMA1
DISTI # 32689028		Infineon Technologies AGBSC016N06NST5000
  • 5000:$1.1842
BSC016N06NSTATMA1
DISTI # 32445508		Infineon Technologies AGBSC016N06NST4314
  • 6:$2.8853
BSC016N06NSTATMA1
DISTI # BSC016N06NSTATMA1		Infineon Technologies AGOptiMOS Power Transistor MOSFET N-Channel 60V 100A 8-Pin TDSON-FL T/R - Tape and Reel (Alt: BSC016N06NSTATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 30000:$1.0900
  • 50000:$1.0900
  • 10000:$1.1900
  • 20000:$1.1900
  • 5000:$1.2900
BSC016N06NSTATMA1
DISTI # SP001657074		Infineon Technologies AGOptiMOS Power Transistor MOSFET N-Channel 60V 100A 8-Pin TDSON-FL T/R (Alt: SP001657074)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 50000:€1.0489
  • 30000:€1.1239
  • 20000:€1.2108
  • 10000:€1.3119
  • 5000:€1.5739
BSC016N06NSTATMA1
DISTI # 93AC6983		Infineon Technologies AGMOSFET, N-CH, 60V, 100A, 167W, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0014ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power RoHS Compliant: Yes2429
  • 1000:$1.3500
  • 500:$1.6400
  • 250:$1.7500
  • 100:$1.8700
  • 50:$2.0200
  • 25:$2.1800
  • 10:$2.3300
  • 1:$2.7500
BSC016N06NSTATMA1
DISTI # 726-BSC016N06NSTATM1		Infineon Technologies AGMOSFET DIFFERENTIATED MOSFETS
RoHS: Compliant		27859
  • 1:$2.7200
  • 10:$2.3100
  • 100:$1.8500
  • 500:$1.6200
  • 1000:$1.3400
BSC016N06NSTATMA1
DISTI # 2986440		Infineon Technologies AGMOSFET, N-CH, 60V, 100A, 167W, TDSON
RoHS: Compliant		2429
  • 1000:$1.9000
  • 500:$1.9700
  • 250:$2.2100
  • 100:$2.3600
  • 10:$2.8600
  • 1:$3.7300
BSC016N06NSTATMA1
DISTI # 2986440		Infineon Technologies AGMOSFET, N-CH, 60V, 100A, 167W, TDSON5454
  • 500:£1.2400
  • 250:£1.3900
  • 100:£1.4900
  • 10:£1.8100
  • 1:£2.3700
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Қол жетімділік
Қор:
27
Тапсырыс бойынша:
2010
Саны енгізіңіз:
BSC016N06NSTATMA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
2,72 $
2,72 $
10
2,31 $
23,10 $
100
1,85 $
185,00 $
500
1,62 $
810,00 $
1000
1,34 $
1 340,00 $
2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
-ден бастаңыз
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