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| PartNumber | QS8K21TR | QS8K2 | QS8K21 |
| Description | MOSFET TRANS MOSFET NCH 45V 4A 8PIN | ||
| Manufacturer | ROHM Semiconductor | - | Rohm Semiconductor |
| Product Category | MOSFET | - | FETs - Arrays |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TSMT-8 | - | - |
| Number of Channels | 2 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 45 V | - | - |
| Id Continuous Drain Current | 4 A | - | - |
| Rds On Drain Source Resistance | 53 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 120 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 1.5 W | - | - |
| Configuration | Single | - | 1 N-Channel |
| Channel Mode | Enhancement | - | Enhancement |
| Packaging | Reel | - | Tape & Reel (TR) |
| Series | QS8K21 | - | QS8K21 |
| Transistor Type | 2 N-Channel | - | 1 N-Channel |
| Brand | ROHM Semiconductor | - | - |
| Forward Transconductance Min | - | - | - |
| Development Kit | - | - | - |
| Fall Time | 7 ns | - | 7 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 25 ns | - | 25 ns |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 30 ns | - | 30 ns |
| Typical Turn On Delay Time | 9 ns | - | 9 ns |
| Part # Aliases | QS8K21 | - | - |
| Package Case | - | - | 8-SMD, Flat Lead |
| Operating Temperature | - | - | 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | TSMT8 |
| FET Type | - | - | 2 N-Channel (Dual) |
| Power Max | - | - | 550mW |
| Drain to Source Voltage Vdss | - | - | 45V |
| Input Capacitance Ciss Vds | - | - | 460pF @ 10V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 4A |
| Rds On Max Id Vgs | - | - | 53 mOhm @ 4A, 10V |
| Vgs th Max Id | - | - | 2.5V @ 1mA |
| Gate Charge Qg Vgs | - | - | 5.4nC @ 5V |
| Pd Power Dissipation | - | - | 1.5 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 4 A |
| Vds Drain Source Breakdown Voltage | - | - | 45 V |
| Vgs th Gate Source Threshold Voltage | - | - | 4 V |
| Rds On Drain Source Resistance | - | - | 53 mOhms |
| Qg Gate Charge | - | - | 120 nC |
| Forward Transconductance Min | - | - | - |