| PartNumber | IXTH6N100D2 | IXTH6N120 | IXTH6N150 |
| Description | MOSFET 6Amps 1000V | MOSFET 6 Amps 1200V 2.700 Rds | MOSFET HIGH VOLT PWR MOSFET 1500V 6A |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 1 kV | 1.2 kV | 500 V |
| Id Continuous Drain Current | 6 A | 6 A | 6 A |
| Rds On Drain Source Resistance | 2.2 Ohms | 2.4 Ohms | 3.5 Ohms |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 95 nC | - | 67 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 300 W | 300 W | 540 W |
| Packaging | Tube | Tube | Tube |
| Height | 21.46 mm | 21.46 mm | - |
| Length | 16.26 mm | 16.26 mm | - |
| Series | IXTH6N100 | IXTH6N120 | IXTH6N150 |
| Type | Depletion Mode MOSFET | - | High Voltage Power MOSFET |
| Width | 5.3 mm | 5.3 mm | - |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 2.6 S | - | 6.5 mS |
| Fall Time | 47 ns | 18 ns | 38 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 80 ns | 33 ns | 20 ns |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 34 ns | 42 ns | 50 ns |
| Typical Turn On Delay Time | 25 ns | 28 ns | 22 ns |
| Unit Weight | 0.056438 oz | 0.229281 oz | 0.229281 oz |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | Enhancement |
| Transistor Type | - | 1 N-Channel | - |
| Vgs th Gate Source Threshold Voltage | - | - | 5 V |
| Product | - | - | Power MOSFET |