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IXTH6N120

IXTH6N120
Mfr. #:
IXTH6N120
Өндіруші:
Littelfuse
Сипаттама:
MOSFET 6 Amps 1200V 2.700 Rds
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IXTH6N120 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
IXYS
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
Тесік арқылы
Пакет/қорап:
TO-247-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
1.2 kV
Идентификатор - үздіксіз төгу тогы:
6 A
Rds On - ағызу көзіне қарсылық:
2.4 Ohms
Vgs - Шлюз көзі кернеуі:
20 V
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
300 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Қаптама:
Түтік
Биіктігі:
21.46 mm
Ұзындығы:
16.26 mm
Серия:
IXTH6N120
Транзистор түрі:
1 N-Channel
Ені:
5.3 mm
Бренд:
IXYS
Күз уақыты:
18 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
33 ns
Зауыттық буманың саны:
30
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
42 ns
Қосудың әдеттегі кешігу уақыты:
28 ns
Бірлік салмағы:
0.229281 oz
Tags
IXTH6N1, IXTH6N, IXTH6, IXTH, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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Single N-Channel 1200 V 700 mOhm 300 W Power Mosfet - TO-247 AD
***ical
Trans MOSFET N-CH Si 1.2KV 6A 3-Pin(3+Tab) TO-247AD
***S
new, original packaged
***el Nordic
Contact for details
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IRFPG50PBF N-channel MOSFET Transistor, 6.1 A, 1000 V, 3-Pin TO-247AC
*** Source Electronics
Trans MOSFET N-CH 1KV 6.1A 3-Pin(3+Tab) TO-247AC / MOSFET N-CH 1000V 6.1A TO-247AC
*** Stop Electro
Power Field-Effect Transistor, 6.1A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***ark
N Channel Mosfet, 1Kv, 6.1A, To-247; Transistor Polarity:n Channel; Drain Source Voltage Vds:1Kv; Continuous Drain Current Id:6.1A; On Resistance Rds(On):2Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: Yes
***ment14 APAC
MOSFET TRANSISTOR N CH; Transistor Polarity:N Channel; Continuous Drain Current Id:6.1A; Drain Source Voltage Vds:1kV; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.1A; Package / Case:TO-247AC; Power Dissipation Pd:190W; Voltage Vds Typ:1kV; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***nell
MOSFET, N, 1000V, 6.1A, TO-247AC; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:1000V; Current, Id Cont:6A; Resistance, Rds On:2ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247AC; Termination Type:Through Hole; Current, Idm Pulse:24A; Lead Spacing:5.45mm; No. of Pins:3; Power Dissipation:180W; Power, Pd:180W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:0.65°C/W; Transistors, No. of:1; Voltage, Vds:1000V; Voltage, Vds Max:1000V
***ure Electronics
Single N-Channel 900 V 2.5 Ohms Flange Mount Power Mosfet - TO-247AC
***ical
Trans MOSFET N-CH 900V 4.7A 3-Pin(3+Tab) TO-247AC
***ark
Mosfet N-Channel 900V Rohs Compliant: No
***nell
MOSFET, N-CH, 900V, 4.7A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.7A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 2.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Powe
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IRFPF50PBF N-channel MOSFET Transistor, 6.7 A, 900 V, 3-Pin TO-247AC
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Single N-Channel 900 V 1.6 Ohms Flange Mount Power Mosfet - TO-247AC
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:900V; Continuous Drain Current, Id:6.7A; On Resistance, Rds(on):1.6ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, 900V, 6.7A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:6.7A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.7A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.65°C/W; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:190W; Power Dissipation Pd:190W; Pulse Current Idm:27A; Termination Type:Through Hole; Voltage Vds:900V; Voltage Vds Typ:900V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***icroelectronics
N-channel 1500 V, 1.6 Ohm typ., 7 A MDmesh K5 Power MOSFET in a TO-247 package
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Single N-Channel 1500 V 1.9 Ohm 47 nC MDmesh™ K5 Power MOSFET - LFPAK-4
*** Electronics
STW12N150K5 STMicroelectronics MOSFET N-Ch 1500V 7A TO247 RoHS
***ark
Mosfet, N-Ch, 1.5Kv, 7A, 150Deg C, 250W Rohs Compliant: Yes
***el Electronic
16-bit Microcontrollers - MCU BL Auto Micro Processors
***r Electronics
Power Field-Effect Transistor, 4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
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N-channel 1050 V, 1.4 Ohm typ., 4 A MDmesh K5 Power MOSFETs in TO-247 package
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Trans MOSFET N-CH 1.05KV 4A 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
***r Electronics
Power Field-Effect Transistor, 20A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ure Electronics
N-Channel 1200 V 290 mO 20 A Flange Mount Silicon Carbide Power Mosfet - HiP247™
***nell
MOSFET, N-CH, 1.2KV, 20A, HIP247; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 1.2kV; On Resistance Rds(on): 0.169ohm; Rds(on) Test Voltage Vgs: 20V; Threshold Voltage Vgs: 3.5V;
***ark
Mosfet, N-Ch, 1.2Kv, 20A, Hip247; Mosfet Module Configuration:single; Channel Type:n Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:1.2Kv; No. Of Pins:3Pins; Rds(On) Test Voltage:20V; Power Dissipation:175W; Msl:-Rohs Compliant: Yes
Бөлім № Mfg. Сипаттама Қор Бағасы
IXTH6N120
DISTI # 30284411		IXYS CorporationTrans MOSFET N-CH Si 1.2KV 6A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant		570
  • 30:$9.0133
IXTH6N120
DISTI # IXTH6N120-ND		IXYS CorporationMOSFET N-CH 1200V 6A TO-247AD
RoHS: Compliant
Min Qty: 30
Container: Box		Temporarily Out of Stock
  • 30:$8.2617
IXTH6N120
DISTI # 747-IXTH6N120		IXYS CorporationMOSFET 6 Amps 1200V 2.700 Rds
RoHS: Compliant		113
  • 1:$11.5800
  • 10:$10.4300
  • 25:$8.6800
  • 50:$8.0600
  • 100:$7.8800
  • 250:$7.1900
  • 500:$6.5600
  • 1000:$6.2600
IXTH6N120IXYS CorporationSingle N-Channel 1200 V 700 mOhm 300 W Power Mosfet - TO-247 AD
RoHS: Compliant		967Tube
  • 2:$10.5200
  • 10:$8.8900
  • 25:$8.3100
  • 50:$7.9000
  • 100:$7.5100
IXTH6N120
DISTI # XSFP00000008501		IXYS CorporationPowerField-EffectTransistor,30AI(D),200V,0.075ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-247AC
RoHS: Compliant		780
  • 780:$13.1500
  • 30:$14.0300
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Қол жетімділік
Қор:
101
Тапсырыс бойынша:
2084
Саны енгізіңіз:
IXTH6N120 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
11,58 $
11,58 $
10
10,43 $
104,30 $
25
8,26 $
206,50 $
50
8,06 $
403,00 $
100
7,88 $
788,00 $
250
7,19 $
1 797,50 $
500
6,56 $
3 280,00 $
1000
6,26 $
6 260,00 $
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