PartNumber | IPB020NE7N3 G | IPB020NE7N3GATMA1 | IPB021N06N3GATMA1 |
Description | MOSFET N-Ch 75V 120A D2PAK-2 OptiMOS 3 | MOSFET N-CH 75V 120A TO263-3 | MOSFET N-CH 60V 120A TO263-3 |
Manufacturer | Infineon | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | PG-TO-263-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 75 V | - | - |
Id Continuous Drain Current | 120 A | - | - |
Rds On Drain Source Resistance | 2 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2.3 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 155 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 300 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | OptiMOS | - | - |
Packaging | Reel | - | - |
Height | 4.4 mm | - | - |
Length | 10 mm | - | - |
Series | OptiMOS 3 | - | - |
Transistor Type | 1 N-Channel | - | - |
Type | OptiMOS 3 Power-Transistor | - | - |
Width | 9.25 mm | - | - |
Brand | Infineon Technologies | - | - |
Forward Transconductance Min | 98 S | - | - |
Fall Time | 22 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 26 ns | - | - |
Factory Pack Quantity | 1000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 70 ns | - | - |
Typical Turn On Delay Time | 19 ns | - | - |
Part # Aliases | IPB020NE7N3GATMA1 IPB2NE7N3GXT SP000676950 | - | - |
Unit Weight | 0.139332 oz | - | - |
Өндіруші | Бөлім № | Сипаттама | RFQ |
---|---|---|---|
Infineon Technologies |
IPB024N10N5ATMA1 | MOSFET DIFFERENTIATED MOSFETS | |
IPB024N08N5ATMA1 | MOSFET N-Ch 80V 120A D2PAK-2 | ||
IPB025N08N3 G | MOSFET N-Ch 80V 120A D2PAK-2 OptiMOS 3 | ||
IPB020NE7N3 G | MOSFET N-Ch 75V 120A D2PAK-2 OptiMOS 3 | ||
IPB026N06NATMA1 | MOSFET N-Ch 60V 100A D2PAK-2 | ||
IPB026N06N | MOSFET N-Ch 60V 100A D2PAK-2 | ||
IPB025N10N3 G | MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3 | ||
IPB025N10N3GATMA1 | MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3 | ||
IPB024N10N5ATMA1 | MOSFET N-CH 100V 180A TO263-7 | ||
IPB020NE7N3GATMA1 | MOSFET N-CH 75V 120A TO263-3 | ||
IPB021N06N3GATMA1 | MOSFET N-CH 60V 120A TO263-3 | ||
IPB022N04LGATMA1 | MOSFET N-CH 40V 90A TO263-3 | ||
IPB023N04NGATMA1 | MOSFET N-CH 40V 90A TO263-3 | ||
IPB023N06N3GATMA1 | MOSFET N-CH 60V 140A TO263-7 | ||
IPB025N08N3GATMA1 | MOSFET N-CH 80V 120A TO263-3 | ||
IPB025N10N3GATMA1 | MOSFET N-CH 100V 180A TO263-7 | ||
IPB025N10N3GE8187ATMA1 | MOSFET N-CH 100V 180A TO263-7 | ||
IPB026N06NATMA1 | Darlington Transistors MOSFET N-Ch 60V 100A D2PAK-2 | ||
IPB024N08N5ATMA1 | MOSFET N-CH 80V TO263-3 | ||
Infineon Technologies |
IPB025N08N3GATMA1 | MOSFET MV POWER MOS | |
IPB026N06N | MOSFET N-Ch 60V 100A D2PAK-2 | ||
IPB020NE7N3 G | Trans MOSFET N-CH 75V 120A 3-Pin TO-263 T/R - Bulk (Alt: IPB020NE7N3G) | ||
IPB020NE7N3G | Power Field-Effect Transistor, 120A I(D), 75V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
IPB020NE7N3G(020NE7N) | Жаңа және түпнұсқа | ||
IPB021N04N | Жаңа және түпнұсқа | ||
IPB021N04NG | Жаңа және түпнұсқа | ||
IPB021N04NGATMA1 | Жаңа және түпнұсқа | ||
IPB021N06N3 | Жаңа және түпнұсқа | ||
IPB021N06N3G | Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
IPB022N04L | Жаңа және түпнұсқа | ||
IPB022N04LG | Power Field-Effect Transistor, 90A I(D), 40V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
IPB022N04LG,022N04 | Жаңа және түпнұсқа | ||
IPB023N04N | Жаңа және түпнұсқа | ||
IPB023N04NG | Power Field-Effect Transistor, 90A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
IPB023N04NGS | Жаңа және түпнұсқа | ||
IPB023N06N3 | Жаңа және түпнұсқа | ||
IPB023N06N3G | 140 A, 60 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 | ||
IPB024N08N5 | N-CH 80V 120A 2,4mOhm TO263-3 | ||
IPB024N10N5 | Жаңа және түпнұсқа | ||
IPB025N08N3 | Жаңа және түпнұсқа | ||
IPB025N08N3 G | Trans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R - Bulk (Alt: IPB025N08N3 G) | ||
IPB025N08N3G | Жаңа және түпнұсқа | ||
IPB025N10N3 G | MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3 | ||
IPB025N10N3G | Trans MOSFET N-CH 100V 180A 7-Pin TO-263 T/R (Alt: IPB025N10N3 G) | ||
IPB025N10N3G , 2SD1824 | Жаңа және түпнұсқа | ||
IPB025N10N3GE8197ATMA1 | - Bulk (Alt: IPB025N10N3GE8197ATMA1) | ||
IPB021N06N3 G | IGBT Transistors MOSFET N-Ch 60V 120A D2PAK-2 | ||
IPB023N06N3 G | IGBT Transistors MOSFET N-Ch 60V 140A D2PAK-6 | ||
IPB023N04N G | IGBT Transistors MOSFET N-Ch 40V 90A D2PAK-2 | ||
IPB025N10N3GE818XT | RF Bipolar Transistors MOSFET N-Ch 100V 180A D2PAK-6 |