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IPB025N08N3 G

IPB025N08N3 G
Mfr. #:
IPB025N08N3 G
Өндіруші:
Infineon Technologies
Сипаттама:
Trans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R - Bulk (Alt: IPB025N08N3 G)
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IPB025N08N3 G Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
IPB025N08N3 G Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші
Infineon Technologies
Өнім санаты
Транзисторлар - FETs, MOSFETs - Бірыңғай
Сериялар
OptiMOS 3
Қаптама
Ролик
Бөлік бүркеншік аттар
IPB025N08N3GATMA1 IPB025N08N3GXT SP000311980
Бірлік-салмағы
0.139332 oz
Монтаждау стилі
SMD/SMT
Сауда атауы
OptiMOS
Пакет-қорап
TO-252-3
Технология
Си
Арналар саны
1 Channel
Конфигурация
Бойдақ
Транзистор түрі
1 N-Channel
Pd-қуат-диссипация
300 W
Максималды-жұмыс температурасы
+ 175 C
Ең төменгі жұмыс температурасы
- 55 C
Күз уақыты
33 ns
Көтерілу уақыты
73 ns
Vgs-қақпа-көзі-кернеу
20 V
Id-үздіксіз-ағызу-ток
120 A
Vds-ағызу-көз-бұзу-кернеу
80 V
Rds-On-Drain-Source-Resistance
2.5 mOhms
Транзистор-полярлық
N-арна
Әдеттегі-өшіру-кідірту уақыты
86 ns
Әдеттегі-қосу-кешігу-уақыты
28 ns
Арна режимі
Жақсарту
Tags
IPB025N08N3G, IPB025N0, IPB025, IPB02, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Бөлім № Mfg. Сипаттама Қор Бағасы
IPB025N08N3GATMA1
DISTI # V72:2272_06377516		Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		491
  • 250:$3.3140
  • 100:$3.6820
  • 25:$4.3940
  • 10:$4.6929
  • 1:$5.4740
IPB025N08N3GATMA1
DISTI # V36:1790_06377516		Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
    IPB025N08N3GATMA1
    DISTI # IPB025N08N3GATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 80V 120A TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		7603In Stock
    • 500:$3.5581
    • 100:$4.3940
    • 10:$5.3590
    • 1:$6.0000
    IPB025N08N3GATMA1
    DISTI # IPB025N08N3GATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 80V 120A TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		7603In Stock
    • 500:$3.5581
    • 100:$4.3940
    • 10:$5.3590
    • 1:$6.0000
    IPB025N08N3GATMA1
    DISTI # IPB025N08N3GATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 80V 120A TO263-3
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		5000In Stock
    • 2000:$2.7677
    • 1000:$2.9134
    IPB025N08N3 G
    DISTI # 32731516    		Infineon Technologies AG01000
    • 200:$4.2840
    • 100:$4.6792
    • 50:$5.7120
    • 10:$5.7758
    • 4:$6.4260
    IPB025N08N3GATMA1
    DISTI # 31005994    		Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		1000
    • 1000:$2.3063
    IPB025N08N3GATMA1
    DISTI # 32864934    		Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		1000
    • 1000:$2.1709
    • 500:$2.2288
    • 250:$2.2899
    • 100:$2.3544
    • 50:$2.4226
    • 25:$2.4949
    • 5:$2.5717
    IPB025N08N3GATMA1
    DISTI # 30331029    		Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		491
    • 250:$3.5625
    • 100:$3.9581
    • 25:$4.7236
    • 10:$5.0449
    • 3:$5.8845
    IPB025N08N3GATMA1
    DISTI # SP000311980    		Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R (Alt: SP000311980)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel    		Europe - 2000
    • 1000:€2.4900
    • 2000:€2.3900
    • 4000:€2.2900
    • 6000:€2.1900
    • 10000:€1.9900
    IPB025N08N3 G
    DISTI # IPB025N08N3 G    		Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R - Bulk (Alt: IPB025N08N3 G)
    RoHS: Compliant
    Min Qty: 148
    Container: Bulk    		Americas - 0
    • 149:$2.3900
    • 151:$2.2900
    • 300:$2.1900
    • 745:$2.0900
    • 1490:$2.0900
    IPB025N08N3GXT
    DISTI # IPB025N08N3GATMA1    		Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB025N08N3GATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 1000:$2.6900
    • 2000:$2.5900
    • 4000:$2.4900
    • 6000:$2.3900
    • 10000:$2.3900
    IPB025N08N3GATMA1
    DISTI # 60R2648    		Infineon Technologies AGMOSFET, N CHANNEL, 80V, 120A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.002ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes0
    • 500:$3.1400
    • 250:$3.5000
    • 100:$3.6900
    • 50:$3.8800
    • 25:$4.0600
    • 10:$4.2500
    • 1:$5.0000
    IPB025N08N3 G
    DISTI # 726-IPB025N08N3G    		Infineon Technologies AGMOSFET N-Ch 80V 120A D2PAK-2 OptiMOS 3
    RoHS: Compliant    		1428
    • 1:$5.0000
    • 10:$4.2500
    • 100:$3.6900
    • 250:$3.5000
    • 500:$3.1400
    • 1000:$2.6400
    • 2000:$2.5100
    IPB025N08N3 GInfineon Technologies AGPower Field-Effect Transistor, 120A I(D), 80V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Not Compliant    		2700
    • 1000:$2.2400
    • 500:$2.3600
    • 100:$2.4500
    • 25:$2.5600
    • 1:$2.7500
    IPB025N08N3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 120A I(D), 80V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant    		20
    • 1000:$2.2400
    • 500:$2.3600
    • 100:$2.4500
    • 25:$2.5600
    • 1:$2.7500
    IPB025N08N3GATMA1
    DISTI # 8986898P    		Infineon Technologies AGMOSFET N-CHANNEL 80V 120A TO263-3, RL258
    • 10:£1.9800
    IPB025N08N3GATMA1
    DISTI # 1775525    		Infineon Technologies AGMOSFET, N CH, 120A, 80V, PG-TO263-3
    RoHS: Compliant    		1424
    • 500:£2.4400
    • 250:£2.7200
    • 100:£2.8700
    • 10:£3.3000
    • 1:£4.3400
    IPB025N08N3GATMA1
    DISTI # 1775525    		Infineon Technologies AGMOSFET, N CH, 120A, 80V, PG-TO263-3
    RoHS: Compliant    		324
    • 2000:$3.7800
    • 1000:$3.9800
    • 500:$4.7300
    • 250:$5.2700
    • 100:$5.5600
    • 10:$6.4000
    • 1:$7.5400
    IPB025N08N3GATMA1
    DISTI # XSKDRABS0032304    		Infineon Technologies AG 
    RoHS: Compliant    		3000 in Stock0 on Order
    • 3000:$3.4440
    • 1000:$3.6960
    Сурет Бөлім № Сипаттама
    IPB025N10N3 G

    Mfr.#: IPB025N10N3 G

    OMO.#: OMO-IPB025N10N3-G

    		 MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3
    IPB025N10N3GATMA1

    Mfr.#: IPB025N10N3GATMA1

    OMO.#: OMO-IPB025N10N3GATMA1

    		 MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3
    IPB025N08N3GATMA1

    Mfr.#: IPB025N08N3GATMA1

    OMO.#: OMO-IPB025N08N3GATMA1

    		 MOSFET MV POWER MOS
    IPB025N08N3 G

    Mfr.#: IPB025N08N3 G

    OMO.#: OMO-IPB025N08N3-G-1190

    		 Trans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R - Bulk (Alt: IPB025N08N3 G)
    IPB025N08N3G

    Mfr.#: IPB025N08N3G

    OMO.#: OMO-IPB025N08N3G-1190

    		 Жаңа және түпнұсқа
    IPB025N10N3 G

    Mfr.#: IPB025N10N3 G

    OMO.#: OMO-IPB025N10N3-G-1190

    		 MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3
    IPB025N10N3G

    Mfr.#: IPB025N10N3G

    OMO.#: OMO-IPB025N10N3G-1190

    		 Trans MOSFET N-CH 100V 180A 7-Pin TO-263 T/R (Alt: IPB025N10N3 G)
    IPB025N10N3GATMA1

    Mfr.#: IPB025N10N3GATMA1

    OMO.#: OMO-IPB025N10N3GATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 100V 180A TO263-7
    IPB025N10N3GE8187ATMA1

    Mfr.#: IPB025N10N3GE8187ATMA1

    OMO.#: OMO-IPB025N10N3GE8187ATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 100V 180A TO263-7
    IPB025N10N3GE818XT

    Mfr.#: IPB025N10N3GE818XT

    OMO.#: OMO-IPB025N10N3GE818XT-317

    		 RF Bipolar Transistors MOSFET N-Ch 100V 180A D2PAK-6
    Қол жетімділік
    Қор:
    Available
    Тапсырыс бойынша:
    5500
    Саны енгізіңіз:
    IPB025N08N3 G ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
    Анықтамалық баға (USD)
    Саны
    Тауар өлшемінің бағасы
    Қосымша. Бағасы
    1
    3,14 $
    3,14 $
    10
    2,98 $
    29,78 $
    100
    2,82 $
    282,15 $
    500
    2,66 $
    1 332,40 $
    1000
    2,51 $
    2 508,00 $
    -ден бастаңыз
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