IPB020NE7N3G

IPB020NE7N3G
Mfr. #:
IPB020NE7N3G
Өндіруші:
Rochester Electronics, LLC
Сипаттама:
Power Field-Effect Transistor, 120A I(D), 75V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IPB020NE7N3G Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Tags
IPB020NE7N3G, IPB020NE, IPB020, IPB02, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Бөлім № Mfg. Сипаттама Қор Бағасы
IPB020NE7N3GATMA1
DISTI # V72:2272_06377372
Infineon Technologies AGTrans MOSFET N-CH 75V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
1000
  • 1000:$2.7250
  • 500:$3.3590
  • 250:$3.9820
  • 100:$4.0220
  • 25:$4.9509
  • 10:$5.0010
  • 1:$6.1787
IPB020NE7N3GATMA1
DISTI # V36:1790_06377372
Infineon Technologies AGTrans MOSFET N-CH 75V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
0
  • 1000000:$2.3000
  • 500000:$2.3020
  • 100000:$2.4680
  • 10000:$2.7450
  • 1000:$2.7900
IPB020NE7N3GATMA1
DISTI # IPB020NE7N3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 75V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
3171In Stock
  • 500:$3.5450
  • 100:$4.1643
  • 10:$5.0830
  • 1:$5.6600
IPB020NE7N3GATMA1
DISTI # IPB020NE7N3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 75V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
3171In Stock
  • 500:$3.5450
  • 100:$4.1643
  • 10:$5.0830
  • 1:$5.6600
IPB020NE7N3GATMA1
DISTI # IPB020NE7N3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 75V 120A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
2000In Stock
  • 2000:$2.7575
  • 1000:$2.9027
IPB020NE7N3GATMA1
DISTI # 32911882
Infineon Technologies AGTrans MOSFET N-CH 75V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
1000
  • 1000:$2.4235
IPB020NE7N3GATMA1
DISTI # 32914046
Infineon Technologies AGTrans MOSFET N-CH 75V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
1000
  • 3:$6.1787
IPB020NE7N3 G
DISTI # IPB020NE7N3G
Infineon Technologies AGTrans MOSFET N-CH 75V 120A 3-Pin TO-263 T/R - Bulk (Alt: IPB020NE7N3G)
RoHS: Not Compliant
Min Qty: 139
Container: Bulk
Americas - 0
  • 695:$2.4900
  • 1390:$2.4900
  • 417:$2.5900
  • 278:$2.6900
  • 139:$2.7900
IPB020NE7N3GATMA1
DISTI # IPB020NE7N3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 75V 120A 3-Pin(2+Tab) TO-263 - Bulk (Alt: IPB020NE7N3GATMA1)
RoHS: Compliant
Min Qty: 142
Container: Bulk
Americas - 0
  • 710:$2.1900
  • 1420:$2.1900
  • 426:$2.2900
  • 284:$2.3900
  • 142:$2.4900
IPB020NE7N3GATMA1
DISTI # IPB020NE7N3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 75V 120A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB020NE7N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 6000:$2.4900
  • 10000:$2.4900
  • 4000:$2.5900
  • 2000:$2.6900
  • 1000:$2.7900
IPB020NE7N3GATMA1
DISTI # SP000676950
Infineon Technologies AGTrans MOSFET N-CH 75V 120A 3-Pin(2+Tab) TO-263 (Alt: SP000676950)
RoHS: Compliant
Min Qty: 1000
Europe - 0
  • 10000:€2.0900
  • 6000:€2.2900
  • 4000:€2.3900
  • 2000:€2.4900
  • 1000:€2.5900
IPB020NE7N3GATMA1
DISTI # 85X6012
Infineon Technologies AGMOSFET Transistor, N Channel, 120 A, 75 V, 0.0018 ohm, 10 V, 3.1 V RoHS Compliant: Yes0
    IPB020NE7N3 G
    DISTI # 726-IPB020NE7N3GXT
    Infineon Technologies AGMOSFET N-Ch 75V 120A D2PAK-2 OptiMOS 3
    RoHS: Compliant
    525
    • 1:$5.2200
    • 10:$4.4400
    • 100:$3.8500
    • 250:$3.6500
    • 500:$3.2700
    • 1000:$2.7600
    • 2000:$2.6200
    IPB020NE7N3GInfineon Technologies AGPower Field-Effect Transistor, 120A I(D), 75V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant
    5948
    • 1000:$2.5900
    • 500:$2.7300
    • 100:$2.8400
    • 25:$2.9600
    • 1:$3.1900
    IPB020NE7N3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 120A I(D), 75V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant
    10245
    • 1000:$2.3300
    • 500:$2.4500
    • 100:$2.5500
    • 25:$2.6600
    • 1:$2.8700
    IPB020NE7N3GATMA1
    DISTI # 8259213P
    Infineon Technologies AGMOSFET N-CH 120A 75V OPTIMOS3 TO263, RL1630
    • 25:£2.0800
    IPB020NE7N3GATMA1
    DISTI # 8259213
    Infineon Technologies AGMOSFET N-CH 120A 75V OPTIMOS3 TO263, PK150
    • 25:£2.0800
    • 5:£2.1340
    IPB020NE7N3GATMA1
    DISTI # IPB020NE7N3GATMA1
    Infineon Technologies AGTransistor: N-MOSFET,unipolar,75V,120A,300W,PG-TO263-3379
    • 100:$1.9933
    • 10:$2.3875
    • 3:$2.5902
    • 1:$2.7816
    IPB020NE7N3GATMA1
    DISTI # 2443378
    Infineon Technologies AGMOSFET, N CH, 75V, 120A, TO-263-3
    RoHS: Compliant
    0
    • 1000:$4.1600
    • 500:$4.9300
    • 250:$5.5000
    • 100:$5.8000
    • 10:$6.6900
    • 1:$7.8700
    IPB020NE7N3GATMA1
    DISTI # 2443378RL
    Infineon Technologies AGMOSFET, N CH, 75V, 120A, TO-263-3
    RoHS: Compliant
    0
    • 1000:$4.1600
    • 500:$4.9300
    • 250:$5.5000
    • 100:$5.8000
    • 10:$6.6900
    • 1:$7.8700
    IPB020NE7N3 G
    DISTI # TMOSP10315
    Infineon Technologies AGN-CH75V 120A2mOhm TO263-3
    RoHS: Compliant
    Stock DE - 2005Stock HK - 0Stock US - 0
    • 1000:$2.6000
    Сурет Бөлім № Сипаттама
    IPB020N04NGATMA1

    Mfr.#: IPB020N04NGATMA1

    OMO.#: OMO-IPB020N04NGATMA1

    MOSFET MV POWER MOS
    IPB020N10N5LFATMA1

    Mfr.#: IPB020N10N5LFATMA1

    OMO.#: OMO-IPB020N10N5LFATMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 100V D2PAK-3
    IPB020N08N5ATMA1-CUT TAPE

    Mfr.#: IPB020N08N5ATMA1-CUT TAPE

    OMO.#: OMO-IPB020N08N5ATMA1-CUT-TAPE-1190

    Жаңа және түпнұсқа
    IPB020N04N

    Mfr.#: IPB020N04N

    OMO.#: OMO-IPB020N04N-1190

    Жаңа және түпнұсқа
    IPB020N04NG

    Mfr.#: IPB020N04NG

    OMO.#: OMO-IPB020N04NG-1190

    Жаңа және түпнұсқа
    IPB020NE7N3

    Mfr.#: IPB020NE7N3

    OMO.#: OMO-IPB020NE7N3-1190

    Жаңа және түпнұсқа
    IPB020NE7N3G

    Mfr.#: IPB020NE7N3G

    OMO.#: OMO-IPB020NE7N3G-1190

    Power Field-Effect Transistor, 120A I(D), 75V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    IPB020NE7N3GATMA1

    Mfr.#: IPB020NE7N3GATMA1

    OMO.#: OMO-IPB020NE7N3GATMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 75V 120A TO263-3
    IPB020N10N5ATMA1

    Mfr.#: IPB020N10N5ATMA1

    OMO.#: OMO-IPB020N10N5ATMA1-INFINEON-TECHNOLOGIES

    IGBT Transistors MOSFET N-Ch 100V 120A D2PAK-2
    IPB020N08N5ATMA1

    Mfr.#: IPB020N08N5ATMA1

    OMO.#: OMO-IPB020N08N5ATMA1-INFINEON-TECHNOLOGIES

    RF Bipolar Transistors MOSFET N-Ch 80V 120A D2PAK-2
    Қол жетімділік
    Қор:
    Available
    Тапсырыс бойынша:
    5000
    Саны енгізіңіз:
    IPB020NE7N3G ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
    Анықтамалық баға (USD)
    Саны
    Тауар өлшемінің бағасы
    Қосымша. Бағасы
    1
    0,00 $
    0,00 $
    10
    0,00 $
    0,00 $
    100
    0,00 $
    0,00 $
    500
    0,00 $
    0,00 $
    1000
    0,00 $
    0,00 $
    -ден бастаңыз
    Ең жаңа өнімдер
    • IO-Link™ Devices
      Maxim Integrated’s complete portfolio of IO-link devices integrate value-adding features to provide design flexibility and offload the local processor.
    • Large Diameter Clear Hole Spacers
      RAF's large diameter clear hole spacers for industrial applications are available in standard stock sizes, various materials and finishes, and custom options.
    • WE-ExB Series Common Mode Power Line Choke
      Wurth's WE-ExB series is the double core made of MnZn and NiZn. Its insertion loss has a range of effect over a broader frequency range than does a single NiZn or MnZn core.
    • CPI2-B1-REU Production Device Programmer
      Phyton's CPI2-B1-REU in-system programmer supports Renesas microcontrollers, memory devices, and MCUs from other manufacturers.
    • CFSH05-20L Schottky Diode
      Central Semiconductor's space saving, low profile Schottky diode for applications including DC-DC conversion and circuit protection.
    Top