BSS169H63

BSS169H6327XTSA1 vs BSS169H6327XT vs BSS169H6327

 
PartNumberBSS169H6327XTSA1BSS169H6327XTBSS169H6327
DescriptionMOSFET N-Ch 100V 90mA SOT-23-3MOSFET N-Ch 100V 90mA SOT-23-3RoHS(ship within 1day)
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePG-SOT-23-3PG-SOT-23-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current90 mA90 mA-
Rds On Drain Source Resistance6 Ohms6 Ohms-
Vgs th Gate Source Threshold Voltage2.9 V2.9 V-
Vgs Gate Source Voltage10 V10 V-
Qg Gate Charge2.1 nC2.1 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation360 mW360 mW-
ConfigurationSingleSingle-
Channel ModeDepletionDepletion-
QualificationAEC-Q101AEC-Q101-
PackagingReelReel-
Height1.1 mm1.1 mm-
Length2.9 mm2.9 mm-
ProductMOSFET Small SignalMOSFET Small Signal-
SeriesBSS169BSS169-
Transistor Type1 N-Channel1 N-Channel-
TypeSIPMOS Small Signal TransistorSIPMOS Small Signal Transistor-
Width1.3 mm1.3 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min0.1 S0.1 S-
Fall Time27 ns27 ns-
Product TypeMOSFETMOSFET-
Rise Time2.7 ns2.7 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time11 ns11 ns-
Typical Turn On Delay Time2.9 ns2.9 ns-
Part # AliasesBSS169 BSS169H6327XT H6327 SP000702572BSS169 BSS169H6327XTSA1 H6327 SP000702572-
Unit Weight0.000282 oz0.000282 oz-
Өндіруші Бөлім № Сипаттама RFQ
Infineon Technologies
Infineon Technologies
BSS169H6327XTSA1 MOSFET N-Ch 100V 90mA SOT-23-3
BSS169H6327XT MOSFET N-Ch 100V 90mA SOT-23-3
BSS169H6327XTSA1 MOSFET N-CH 100V 170MA SOT23
BSS169H6327 RoHS(ship within 1day)
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