PartNumber | BSS169 H6327 | BSS169 E6327 | BSS169 E6906 |
Description | MOSFET N-Ch 100V 90mA SOT-23-3 | MOSFET N-CH 100V 170MA SOT-23 | MOSFET N-CH 100V 170MA SOT-23 |
Manufacturer | Infineon | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | PG-SOT-23-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 100 V | - | - |
Id Continuous Drain Current | 90 mA | - | - |
Rds On Drain Source Resistance | 6 Ohms | - | - |
Vgs th Gate Source Threshold Voltage | 2.9 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 2.1 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 360 mW | - | - |
Configuration | Single | - | - |
Channel Mode | Depletion | - | - |
Qualification | AEC-Q101 | - | - |
Packaging | Reel | - | - |
Height | 1.1 mm | - | - |
Length | 2.9 mm | - | - |
Product | MOSFET Small Signal | - | - |
Series | BSS169 | - | - |
Transistor Type | 1 N-Channel | - | - |
Type | SIPMOS Small Signal Transistor | - | - |
Width | 1.3 mm | - | - |
Brand | Infineon Technologies | - | - |
Forward Transconductance Min | 0.1 S | - | - |
Fall Time | 27 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 2.7 ns | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 11 ns | - | - |
Typical Turn On Delay Time | 2.9 ns | - | - |
Part # Aliases | BSS169H6327XT BSS169H6327XTSA1 SP000702572 | - | - |
Unit Weight | 0.000282 oz | - | - |