BSC10

BSC100N03MSGATMA1 vs BSC100N03MS G vs BSC100N03LSGATMA1

 
PartNumberBSC100N03MSGATMA1BSC100N03MS GBSC100N03LSGATMA1
DescriptionMOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3MMOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3MMOSFET N-CH 30V 44A TDSON-8
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTDSON-8TDSON-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current44 A44 A-
Rds On Drain Source Resistance8.3 mOhms8.3 mOhms-
Vgs th Gate Source Threshold Voltage1 V1 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge23 nC23 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation30 W30 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height1.27 mm1.27 mm-
Length5.9 mm5.9 mm-
SeriesOptiMOS 3MOptiMOS 3M-
Transistor Type1 N-Channel1 N-Channel-
Width5.15 mm5.15 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min27 S27 S-
Fall Time5.4 ns5.4 ns-
Product TypeMOSFETMOSFET-
Rise Time4.8 ns4.8 ns-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time8 ns8 ns-
Typical Turn On Delay Time8.5 ns8.5 ns-
Part # AliasesBSC100N03MS BSC1N3MSGXT G SP000311515BSC100N03MSGATMA1 BSC1N3MSGXT SP000311515-
Өндіруші Бөлім № Сипаттама RFQ
Infineon Technologies
Infineon Technologies
BSC100N06LS3 G MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
BSC100N10NSF G MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2
BSC100N06LS3GATMA1 MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
BSC109N10NS3 G MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 3
BSC100N03MSGATMA1 MOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3M
BSC100N03MS G MOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3M
BSC105N10LSF G MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2
BSC100N03LSGATMA1 MOSFET N-CH 30V 44A TDSON-8
BSC100N06LS3GATMA1 MOSFET N-CH 60V 50A TDSON-8
BSC100N10NSFGATMA1 MOSFET N-CH 100V 90A TDSON-8
BSC106N025S G MOSFET N-CH 25V 30A TDSON-8
BSC109N10NS3GATMA1 MOSFET N-CH 100V 63A 8TDSON
BSC105N10LSFGATMA1 MOSFET N-CH 100V 90A TDSON-8
BSC100N03MSGATMA1 MOSFET N-CH 30V 44A TDSON-8
Infineon Technologies
Infineon Technologies
BSC105N10LSFGATMA1 MOSFET MV POWER MOS
BSC100N10NSFGXT Trans MOSFET N-CH 100V 11.4A 8-Pin TDSON - Tape and Reel (Alt: BSC100N10NSFGATMA1)
BSC109N10NS3GXT Trans MOSFET N-CH 100V 63A 8-Pin TDSON EP - Tape and Reel (Alt: BSC109N10NS3GATMA1)
BSC100N03LS Жаңа және түпнұсқа
BSC100N03LS G MOSFET, N CH, 30V, 44A, PG-TSDSON, Transistor Polarity:N Channel, Continuous Drain Current Id:44A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0083ohm, Rds(on) Test Voltage Vgs:10V, Th
BSC100N03LSG Power Field-Effect Transistor, 13A I(D), 30V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSC100N03LSG , TDZ TR 6. Жаңа және түпнұсқа
BSC100N03LSG,100N03LS, Жаңа және түпнұсқа
BSC100N03MS Жаңа және түпнұсқа
BSC100N03MS G Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP
BSC100N03MSG Trans MOSFET N-CH 30V 12A 8-Pin TDSON T/R (Alt: BSC100N03MS G)
BSC100N03MSGATMA1 , TDZ Жаңа және түпнұсқа
BSC100N06LS Жаңа және түпнұсқа
BSC100N06LS3 G Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R
BSC100N06LS3G 60V,50A,N Channel Power MOSFET
BSC100N06LS3GXT Жаңа және түпнұсқа
BSC100N10NS Жаңа және түпнұсқа
BSC100N10NSFG 100V,90A,N Channel Power MOSFET
BSC105N10LS Жаңа және түпнұсқа
BSC105N10LSFG Жаңа және түпнұсқа
BSC105N10LSFGXT Жаңа және түпнұсқа
BSC106N025SG Жаңа және түпнұсқа
BSC109N10NS3 G MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 3
BSC109N10NS3G Trans MOSFET N-CH 100V 63A 8-Pin TDSON T/R (Alt: BSC109N10NS3 G)
BSC105N10LSFGATMA1-CUT TAPE Жаңа және түпнұсқа
BSC100N10NSF G MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2
BSC105N10LSF G MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2
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