BSC100N06LS3GATMA1

BSC100N06LS3GATMA1
Mfr. #:
BSC100N06LS3GATMA1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET N-CH 60V 50A TDSON-8
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
BSC100N06LS3GATMA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші
Infineo
Өнім санаты
FETs - жалғыз
Сериялар
OptiMOS
Қаптама
Digi-ReelR балама орамасы
Бөлік бүркеншік аттар
BSC100N06LS3 BSC100N06LS3GXT G SP000453664
Монтаждау стилі
SMD/SMT
Сауда атауы
OptiMOS
Пакет-қорап
8-PowerTDFN
Технология
Си
Жұмыс температурасы
-55°C ~ 150°C (TJ)
Монтаждау түрі
Беттік орнату
Арналар саны
1 Channel
Жабдықтаушы-құрылғы-пакет
PG-TDSON-8
Конфигурация
Бойдақ
FET түрі
MOSFET N-арнасы, металл оксиді
Қуат – Макс
50W
Транзистор түрі
1 N-Channel
Ағызу-көзге-кернеу-Vdss
60V
Кіріс-сыйымдылық-Ciss-Vds
3500pF @ 30V
FET мүмкіндігі
Логикалық деңгей қақпасы
Ағымдағы-Үздіксіз-ағызу-Id-25°C
12A (Ta), 50A (Tc)
Rds-On-Max-Id-Vgs
10 mOhm @ 50A, 10V
Vgs-th-Max-Id
2.2V @ 23μA
Gate-Charge-Qg-Vgs
45nC @ 10V
Pd-қуат-диссипация
50 W
Максималды-жұмыс температурасы
+ 150 C
Ең төменгі жұмыс температурасы
- 55 C
Күз уақыты
8 ns
Көтерілу уақыты
58 ns
Vgs-қақпа-көзі-кернеу
+/- 20 V
Id-үздіксіз-ағызу-ток
50 A
Vds-ағызу-көз-бұзу-кернеу
60 V
Vgs-th-Gate-Көзі-Табалдырық-кернеу
1.7 V
Rds-On-Drain-Source-Resistance
10 mOhms
Транзистор-полярлық
N-арна
Әдеттегі-өшіру-кідірту уақыты
19 ns
Әдеттегі-қосу-кешігу-уақыты
8 ns
Qg-Gate-Заряд
15 nC
Форвард-өткізгіштік-мин
63 S
Арна режимі
Жақсарту
Tags
BSC100N06LS3, BSC100N06, BSC100N0, BSC100, BSC10, BSC1, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N-CH, 60V, 50A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain
*** Source Electronics
OptiMOS3 Power-Transistor / Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R
***ure Electronics
Single N-Channel 60 V 10 mOhm 45 nC OptiMOS™ Power Mosfet - TDSON-8
***ineon SCT
OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TDSON-8, RoHS
***nell
MOSFET, N-CH, 60V, 50A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0078ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:50W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SuperSOT; No. of Pins:8; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C
***ineon
OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
Бөлім № Mfg. Сипаттама Қор Бағасы
BSC100N06LS3GATMA1
DISTI # BSC100N06LS3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 60V 50A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
21549In Stock
  • 1000:$0.4929
  • 500:$0.6243
  • 100:$0.8050
  • 10:$1.0190
  • 1:$1.1500
BSC100N06LS3GATMA1
DISTI # BSC100N06LS3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 60V 50A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
21549In Stock
  • 1000:$0.4929
  • 500:$0.6243
  • 100:$0.8050
  • 10:$1.0190
  • 1:$1.1500
BSC100N06LS3GATMA1
DISTI # BSC100N06LS3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 60V 50A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
20000In Stock
  • 5000:$0.4243
BSC100N06LS3GATMA1
DISTI # BSC100N06LS3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 60V 12A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC100N06LS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$0.3339
  • 10000:$0.3219
  • 20000:$0.3099
  • 30000:$0.2999
  • 50000:$0.2939
BSC100N06LS3GATMA1
DISTI # 47W3311
Infineon Technologies AGMOSFET, N CHANNEL, 60V, 50A, 8TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0078ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V RoHS Compliant: Yes3102
  • 1:$0.9600
  • 10:$0.8120
  • 100:$0.6240
  • 500:$0.5520
  • 1000:$0.4350
  • 2500:$0.4110
  • 10000:$0.3860
BSC100N06LS3 G
DISTI # 726-BSC100N06LS3G
Infineon Technologies AGMOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
RoHS: Compliant
0
  • 1:$0.9600
  • 10:$0.8120
  • 100:$0.6240
  • 500:$0.5520
  • 1000:$0.4350
BSC100N06LS3GATMA1
DISTI # 726-BSC100N06LS3GATM
Infineon Technologies AGMOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
RoHS: Compliant
0
  • 1:$0.9600
  • 10:$0.8120
  • 100:$0.6240
  • 500:$0.5520
  • 1000:$0.4350
BSC100N06LS3GATMA1Infineon Technologies AGSingle N-Channel 60 V 10 mOhm 45 nC OptiMOS Power Mosfet - TDSON-8
RoHS: Not Compliant
10000Reel
  • 5000:$0.3550
BSC100N06LS3GATMA1
DISTI # 7545298
Infineon Technologies AGMOSFET N-CHANNEL 60V 12A OPTIMOS3 TDSON8, PK1395
  • 5:£0.5760
  • 50:£0.3560
  • 250:£0.2900
  • 1250:£0.2780
  • 2500:£0.2740
BSC100N06LS3GATMA1
DISTI # 7545298P
Infineon Technologies AGMOSFET N-CHANNEL 60V 12A OPTIMOS3 TDSON8, RL1270
  • 50:£0.3560
  • 250:£0.2900
  • 1250:£0.2780
  • 2500:£0.2740
BSC100N06LS3GATMA1
DISTI # 2212844
Infineon Technologies AGMOSFET, N-CH, 60V, 50A, 8TDSON
RoHS: Compliant
7982
  • 5:£0.4240
  • 25:£0.3630
  • 100:£0.2870
  • 250:£0.2780
  • 500:£0.2680
BSC100N06LS3GATMA1
DISTI # 2212844
Infineon Technologies AGMOSFET, N-CH, 60V, 50A, 8TDSON
RoHS: Compliant
3102
  • 1:$1.5300
  • 10:$1.2900
  • 100:$0.9870
Сурет Бөлім № Сипаттама
BSC100N06LS3 G

Mfr.#: BSC100N06LS3 G

OMO.#: OMO-BSC100N06LS3-G

MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
BSC100N06LS3GATMA1

Mfr.#: BSC100N06LS3GATMA1

OMO.#: OMO-BSC100N06LS3GATMA1

MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
BSC100N06LS

Mfr.#: BSC100N06LS

OMO.#: OMO-BSC100N06LS-1190

Жаңа және түпнұсқа
BSC100N06LS3 G

Mfr.#: BSC100N06LS3 G

OMO.#: OMO-BSC100N06LS3-G-1190

Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R
BSC100N06LS3G

Mfr.#: BSC100N06LS3G

OMO.#: OMO-BSC100N06LS3G-1190

60V,50A,N Channel Power MOSFET
BSC100N06LS3GATMA1

Mfr.#: BSC100N06LS3GATMA1

OMO.#: OMO-BSC100N06LS3GATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 60V 50A TDSON-8
BSC100N06LS3GXT

Mfr.#: BSC100N06LS3GXT

OMO.#: OMO-BSC100N06LS3GXT-1190

Жаңа және түпнұсқа
Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
3000
Саны енгізіңіз:
BSC100N06LS3GATMA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
0,44 $
0,44 $
10
0,42 $
4,19 $
100
0,40 $
39,68 $
500
0,37 $
187,35 $
1000
0,35 $
352,70 $
-ден бастаңыз
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