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BSC100N10NSF G

BSC100N10NSF G
Mfr. #:
BSC100N10NSF G
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
BSC100N10NSF G Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
BSC100N10NSF G Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
TDSON-8
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
100 V
Идентификатор - үздіксіз төгу тогы:
90 A
Rds On - ағызу көзіне қарсылық:
10 mOhms
Vgs th - Gate-Source шекті кернеуі:
4 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
44 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
156 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
OptiMOS
Қаптама:
Ролик
Биіктігі:
1.27 mm
Ұзындығы:
5.9 mm
Серия:
OptiMOS 2
Транзистор түрі:
1 N-Channel
Түрі:
OptiMOS 2 Power-Transistor
Ені:
5.15 mm
Бренд:
Infineon Technologies
Форвард өткізгіштік - Мин:
61 S, 31 S
Күз уақыты:
7 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
23 ns
Зауыттық буманың саны:
5000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
26 ns
Қосудың әдеттегі кешігу уақыты:
18 ns
Бөлім # Бүркеншік аттар:
BSC100N10NSFGATMA1 BSC1N1NSFGXT SP000379595
Tags
BSC100N10NSF, BSC100N1, BSC100, BSC10, BSC1, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Бөлім № Mfg. Сипаттама Қор Бағасы
BSC100N10NSFGATMA1
DISTI # V72:2272_06378310		Infineon Technologies AGTrans MOSFET N-CH 100V 11.4A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant		3938
  • 3000:$1.0088
  • 1000:$1.0197
  • 500:$1.1923
  • 250:$1.4512
  • 100:$1.4680
  • 25:$1.7295
  • 10:$1.7508
  • 1:$1.8951
BSC100N10NSFGATMA1
DISTI # BSC100N10NSFGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 90A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		68In Stock
  • 1000:$1.1603
  • 500:$1.4004
  • 100:$1.8005
  • 10:$2.2410
  • 1:$2.4800
BSC100N10NSFGATMA1
DISTI # BSC100N10NSFGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 90A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		68In Stock
  • 1000:$1.1603
  • 500:$1.4004
  • 100:$1.8005
  • 10:$2.2410
  • 1:$2.4800
BSC100N10NSFGATMA1
DISTI # BSC100N10NSFGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 90A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$1.0100
BSC100N10NSFGATMA1
DISTI # 26194995		Infineon Technologies AGTrans MOSFET N-CH 100V 11.4A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant		3938
  • 3000:$1.0088
  • 1000:$1.0197
  • 500:$1.1923
  • 250:$1.4512
  • 100:$1.4680
  • 25:$1.7295
  • 10:$1.7508
  • 9:$1.8951
BSC100N10NSFGXT
DISTI # BSC100N10NSFGATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 11.4A 8-Pin TDSON - Tape and Reel (Alt: BSC100N10NSFGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 15000
  • 5000:$0.9889
  • 10000:$0.9869
  • 20000:$0.9839
  • 30000:$0.9819
  • 50000:$0.9789
BSC100N10NSF G
DISTI # SP000379595		Infineon Technologies AGTrans MOSFET N-CH 100V 11.4A 8-Pin TDSON T/R (Alt: SP000379595)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 5000:€1.3929
  • 10000:€1.0849
  • 20000:€0.9019
  • 30000:€0.8409
  • 50000:€0.7999
BSC100N10NSFGATMA1
DISTI # SP000379595		Infineon Technologies AGTrans MOSFET N-CH 100V 11.4A 8-Pin TDSON T/R (Alt: SP000379595)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 5000:€1.0799
  • 10000:€0.8999
  • 20000:€0.8309
  • 30000:€0.7709
  • 50000:€0.7199
BSC100N10NSFGATMA1Infineon Technologies AGSingle N-Channel 100 V 10 mOhm 44 nC OptiMOS Power Mosfet - TDSON-8
RoHS: Not Compliant		5000Reel
  • 5000:$0.8700
BSC100N10NSFGATMA1Infineon Technologies AGPower Field-Effect Transistor, 11.4A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		1514
  • 1000:$1.1600
  • 500:$1.2200
  • 100:$1.2700
  • 25:$1.3300
  • 1:$1.4300
BSC100N10NSF G
DISTI # 726-BSC100N10NSFG		Infineon Technologies AGMOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2
RoHS: Compliant		164
  • 1:$2.0800
  • 10:$1.7700
  • 100:$1.4200
  • 500:$1.2400
  • 1000:$1.0300
  • 2500:$0.9540
  • 5000:$0.9190
BSC100N10NSFGATMA1
DISTI # 9064375P		Infineon Technologies AGMOSFET N-CH 100V 11.4A OPTIMOS TDSON8, RL95
  • 25:£1.4120
  • 125:£1.1280
  • 250:£1.0580
  • 625:£0.9900
BSC100N10NSFGInfineon Technologies AGINSTOCK3392
    BSC100N10NSFGATMA1
    DISTI # C1S322000598902    		Infineon Technologies AGMOSFETs
    RoHS: Compliant    		3938
    • 250:$1.4512
    • 100:$1.4680
    • 25:$1.7295
    • 10:$1.7508
    BSC100N10NSFGInfineon Technologies AG100V,90A,N Channel Power MOSFET3800
    • 1:$1.9000
    • 100:$1.5800
    • 500:$1.4000
    • 1000:$1.3600
    BSC100N10NSFGATMA1
    DISTI # XSFP00000093429    		Infineon Technologies AGSmallSignalField-EffectTransistor,0.2AI(D),50V,2-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET
    RoHS: Compliant    		6730
    • 5000:$1.1600
    • 6730:$1.0900
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    Mfr.#: TPD1E10B09QDPYRQ1

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    UHD1110-FKA-CL1A13R3Q1BBQFMF3

    Mfr.#: UHD1110-FKA-CL1A13R3Q1BBQFMF3

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    Қол жетімділік
    Қор:
    Available
    Тапсырыс бойынша:
    1987
    Саны енгізіңіз:
    BSC100N10NSF G ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
    Анықтамалық баға (USD)
    Саны
    Тауар өлшемінің бағасы
    Қосымша. Бағасы
    1
    2,07 $
    2,07 $
    10
    1,76 $
    17,60 $
    100
    1,41 $
    141,00 $
    500
    1,23 $
    615,00 $
    1000
    1,02 $
    1 020,00 $
    2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
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