 |  | | |
| PartNumber | IPB020NE7N3 G | IPB020NE7N3 | IPB020NE7N3G |
| Description | MOSFET N-Ch 75V 120A D2PAK-2 OptiMOS 3 | Power Field-Effect Transistor, 120A I(D), 75V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | |
| Manufacturer | Infineon | Infineon Technologies | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PG-TO-263-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 75 V | - | - |
| Id Continuous Drain Current | 120 A | - | - |
| Rds On Drain Source Resistance | 2 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.3 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 155 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 300 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Series | OptiMOS 3 | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | OptiMOS 3 Power-Transistor | - | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 98 S | - | - |
| Fall Time | 22 ns | 22 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 26 ns | 26 ns | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 70 ns | 70 ns | - |
| Typical Turn On Delay Time | 19 ns | 19 ns | - |
| Part # Aliases | IPB020NE7N3GATMA1 IPB2NE7N3GXT SP000676950 | - | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Part Aliases | - | IPB020NE7N3GATMA1 IPB020NE7N3GXT SP000676950 | - |
| Package Case | - | TO-252-3 | - |
| Pd Power Dissipation | - | 300 W | - |
| Vgs Gate Source Voltage | - | 2.3 V | - |
| Id Continuous Drain Current | - | 120 A | - |
| Vds Drain Source Breakdown Voltage | - | 75 V | - |
| Vgs th Gate Source Threshold Voltage | - | 3.8 V | - |
| Rds On Drain Source Resistance | - | 2 mOhms | - |
| Qg Gate Charge | - | 206 nC | - |
| Forward Transconductance Min | - | 196 S 98 S | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB020NE7N3 G | MOSFET N-Ch 75V 120A D2PAK-2 OptiMOS 3 | |
| IPB020NE7N3GATMA1 | MOSFET N-CH 75V 120A TO263-3 | ||
| IPB020NE7N3 | Жаңа және түпнұсқа | ||
| IPB020NE7N3 G | Trans MOSFET N-CH 75V 120A 3-Pin TO-263 T/R - Bulk (Alt: IPB020NE7N3G) | ||
| IPB020NE7N3G | Power Field-Effect Transistor, 120A I(D), 75V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| IPB020NE7N3G(020NE7N) | Жаңа және түпнұсқа |