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IPB020N10N5ATMA1

IPB020N10N5ATMA1
Mfr. #:
IPB020N10N5ATMA1
Өндіруші:
Infineon Technologies
Сипаттама:
IGBT Transistors MOSFET N-Ch 100V 120A D2PAK-2
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IPB020N10N5ATMA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
IPB020N10N5ATMA1 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші
Infineon Technologies
Өнім санаты
Транзисторлар - FETs, MOSFETs - Бірыңғай
Қаптама
Ролик
Бөлік бүркеншік аттар
IPB020N10N5 SP001132558
Бірлік-салмағы
0.139332 oz
Монтаждау стилі
SMD/SMT
Пакет-қорап
TO-263-3
Технология
Си
Арналар саны
1 Channel
Конфигурация
Бойдақ
Транзистор түрі
1 N-Channel
Pd-қуат-диссипация
375 W
Максималды-жұмыс температурасы
+ 175 C
Ең төменгі жұмыс температурасы
- 55 C
Күз уақыты
29 ns
Көтерілу уақыты
26 ns
Vgs-қақпа-көзі-кернеу
+/- 20 V
Id-үздіксіз-ағызу-ток
120 A
Vds-ағызу-көз-бұзу-кернеу
100 V
Vgs-th-Gate-Көзі-Табалдырық-кернеу
2.2 V
Rds-On-Drain-Source-Resistance
2.5 mOhms
Транзистор-полярлық
N-арна
Әдеттегі-өшіру-кідірту уақыты
77 ns
Әдеттегі-қосу-кешігу-уақыты
33 ns
Qg-Gate-Заряд
168 nC
Форвард-өткізгіштік-мин
124 S
Арна режимі
Жақсарту
Tags
IPB020N1, IPB020, IPB02, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
IPB020N10N5 Series 100 V 2 mOhm 176 A OptiMOSTM5 Power Transistor - PG-TO 263-3
***ineon SCT
OptiMOS™ 5 100V power MOSFET in D2PAK package with 22% lower RDS(on) for telecom and server power supply applications, PG-TO263-3, RoHS
***ark
Mosfet, N-Ch, 100V, 120A, 175Deg C, 375W; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:120A; On Resistance Rds(On):0.0017Ohm; Transistor Mounting:surface Mount; Threshold Voltage Vgs:3V Rohs Compliant: Yes
***ineon
OptiMOS 5 100V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 100V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 43% from previous generation | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Бөлім № Mfg. Сипаттама Қор Бағасы
IPB020N10N5ATMA1
DISTI # 31260256		Infineon Technologies AGTrans MOSFET N-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$4.2667
IPB020N10N5ATMA1
DISTI # IPB020N10N5ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 120A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		On Order
  • 1000:$3.4114
IPB020N10N5ATMA1
DISTI # IPB020N10N5ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 500:$4.1663
  • 100:$5.1451
  • 10:$6.2750
  • 1:$7.0300
IPB020N10N5ATMA1
DISTI # IPB020N10N5ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 500:$4.1663
  • 100:$5.1451
  • 10:$6.2750
  • 1:$7.0300
IPB020N10N5ATMA1
DISTI # IPB020N10N5ATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB020N10N5ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$3.2900
  • 2000:$3.2900
  • 4000:$3.2900
  • 6000:$3.2900
  • 10000:$3.2900
IPB020N10N5ATMA1
DISTI # 13AC9024		Infineon Technologies AGMOSFET, N-CH, 100V, 120A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0017ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes25
  • 1:$5.8700
  • 10:$4.9900
  • 25:$4.7700
  • 50:$4.5400
  • 100:$4.3200
  • 250:$4.1000
  • 500:$3.6800
IPB020N10N5
DISTI # 726-IPB020N10N5		Infineon Technologies AGMOSFET N-Ch 100V 120A D2PAK-2
RoHS: Compliant		1919
  • 1:$5.8700
  • 10:$4.9900
  • 100:$4.3200
  • 250:$4.1000
  • 500:$3.6800
  • 1000:$3.1100
IPB020N10N5ATMA1
DISTI # 726-IPB020N10N5ATMA1		Infineon Technologies AGMOSFET N-Ch 100V 120A D2PAK-2
RoHS: Compliant		0
  • 1:$5.8700
  • 10:$4.9900
  • 100:$4.3200
  • 250:$4.1000
  • 500:$3.6800
  • 1000:$3.1100
IPB020N10N5ATMA1Infineon Technologies AGIPB020N10N5 Series 100 V 2 mOhm 176 A OptiMOSTM5 Power Transistor - PG-TO 263-3
RoHS: Not Compliant		1000Reel
  • 1000:$3.0500
IPB020N10N5ATMA1
DISTI # 2725837		Infineon Technologies AGMOSFET, N-CH, 100V, 120A, TO-263
RoHS: Compliant		25
  • 1:$11.2100
  • 10:$10.0100
  • 100:$8.2100
  • 500:$6.6500
IPB020N10N5ATMA1
DISTI # 2725837		Infineon Technologies AGMOSFET, N-CH, 100V, 120A, TO-263
RoHS: Compliant		553
  • 1:£5.1600
  • 10:£4.6200
  • 100:£3.9400
Сурет Бөлім № Сипаттама
IPB020N10N5LFATMA1

Mfr.#: IPB020N10N5LFATMA1

OMO.#: OMO-IPB020N10N5LFATMA1

 MOSFET DIFFERENTIATED MOSFETS
IPB020N10N5

Mfr.#: IPB020N10N5

OMO.#: OMO-IPB020N10N5

 MOSFET N-Ch 100V 120A D2PAK-2
IPB020N10N5ATMA1

Mfr.#: IPB020N10N5ATMA1

OMO.#: OMO-IPB020N10N5ATMA1

 MOSFET N-Ch 100V 120A D2PAK-2
IPB020N10N5LFATMA1

Mfr.#: IPB020N10N5LFATMA1

OMO.#: OMO-IPB020N10N5LFATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 100V D2PAK-3
IPB020N10N5

Mfr.#: IPB020N10N5

OMO.#: OMO-IPB020N10N5-1190

 Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) TO-263
IPB020N10N5LF

Mfr.#: IPB020N10N5LF

OMO.#: OMO-IPB020N10N5LF-1190

 SP001503854 , DIFFERENTIATED MOSFETS (Alt: IPB020N10N5LF)
IPB020N10N5ATMA1

Mfr.#: IPB020N10N5ATMA1

OMO.#: OMO-IPB020N10N5ATMA1-INFINEON-TECHNOLOGIES

 IGBT Transistors MOSFET N-Ch 100V 120A D2PAK-2
Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
2000
Саны енгізіңіз:
IPB020N10N5ATMA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
4,58 $
4,58 $
10
4,35 $
43,46 $
100
4,12 $
411,75 $
500
3,89 $
1 944,40 $
1000
3,66 $
3 660,00 $
-ден бастаңыз
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