IXFN32N100Q3

IXFN32N100Q3
Mfr. #:
IXFN32N100Q3
Өндіруші:
Littelfuse
Сипаттама:
MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/28A
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IXFN32N100Q3 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN32N100Q3 DatasheetIXFN32N100Q3 Datasheet (P4-P5)
ECAD Model:
Көбірек ақпарат:
IXFN32N100Q3 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
IXYS
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
Шасси бекіткіші
Пакет/қорап:
SOT-227-4
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
1 kV
Идентификатор - үздіксіз төгу тогы:
28 A
Rds On - ағызу көзіне қарсылық:
320 mOhms
Vgs - Шлюз көзі кернеуі:
30 V
Qg - қақпа заряды:
195 nC
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
780 W
Конфигурация:
Бойдақ
Сауда атауы:
HiPerFET
Қаптама:
Түтік
Серия:
IXFN32N1003
Транзистор түрі:
1 N-Channel
Бренд:
IXYS
Өнім түрі:
MOSFET
Көтеру уақыты:
300 ns
Зауыттық буманың саны:
10
Ішкі санат:
MOSFETs
Бірлік салмағы:
1.058219 oz
Tags
IXFN32N1, IXFN32N, IXFN32, IXFN3, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Бөлім № Mfg. Сипаттама Қор Бағасы
IXFN32N100Q3
DISTI # IXFN32N100Q3-ND
IXYS CorporationMOSFET N-CH 1000V 28A SOT-227
RoHS: Compliant
Min Qty: 1
Container: Tube
10In Stock
  • 100:$36.9000
  • 30:$39.3600
  • 10:$42.5580
  • 1:$45.5100
IXFN32N100Q3
DISTI # 747-IXFN32N100Q3
IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 1000V/28A
RoHS: Compliant
0
  • 1:$45.5100
  • 5:$43.9100
  • 10:$42.5600
  • 25:$39.3600
  • 50:$38.1900
  • 100:$36.9000
  • 200:$34.4400
Сурет Бөлім № Сипаттама
IXFN32N120P

Mfr.#: IXFN32N120P

OMO.#: OMO-IXFN32N120P

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IXFN32N80P

Mfr.#: IXFN32N80P

OMO.#: OMO-IXFN32N80P

MOSFET 29 Amps 800V 0.27 Rds
IXFN32N100P

Mfr.#: IXFN32N100P

OMO.#: OMO-IXFN32N100P

MOSFET 32 Amps 1000V 0.32 Rds
IXFN320N17T2

Mfr.#: IXFN320N17T2

OMO.#: OMO-IXFN320N17T2

MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
IXFN32N100Q3

Mfr.#: IXFN32N100Q3

OMO.#: OMO-IXFN32N100Q3

MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/28A
IXFN32N60

Mfr.#: IXFN32N60

OMO.#: OMO-IXFN32N60

MOSFET 32 Amps 600V
IXFN32N120

Mfr.#: IXFN32N120

OMO.#: OMO-IXFN32N120-1190

Trans MOSFET N-CH Si 1.2KV 32A 4-Pin SOT-227B
IXFN32N100P

Mfr.#: IXFN32N100P

OMO.#: OMO-IXFN32N100P-IXYS-CORPORATION

MOSFET N-CH 1000V 27A SOT-227B
IXFN32N60

Mfr.#: IXFN32N60

OMO.#: OMO-IXFN32N60-IXYS-CORPORATION

MOSFET 32 Amps 600V
IXFN32N100Q3

Mfr.#: IXFN32N100Q3

OMO.#: OMO-IXFN32N100Q3-IXYS-CORPORATION

IGBT Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/28A
Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
5000
Саны енгізіңіз:
IXFN32N100Q3 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
45,51 $
45,51 $
5
43,91 $
219,55 $
10
42,56 $
425,60 $
25
39,36 $
984,00 $
50
38,19 $
1 909,50 $
100
36,90 $
3 690,00 $
200
34,44 $
6 888,00 $
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