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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| SPB02N60C3 DISTI # 30577100 | Infineon Technologies AG | Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) TO-263 RoHS: Compliant | 40 |
|
| SPB02N60C3ATMA1 DISTI # SPB02N60C3ATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 650V 1.8A D2PAK RoHS: Not compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SPB02N60C3 DISTI # C1S322000116018 | Infineon Technologies AG | Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 40 |
|
| SPB02N60C3 DISTI # SP000013516 | Infineon Technologies AG | Trans MOSFET N-CH 600V 1.8A 3-Pin TO-263 T/R (Alt: SP000013516) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel | Europe - 15 |
|
| SPB02N60C3 DISTI # 726-SPB02N60C3 | Infineon Technologies AG | MOSFET N-Ch 600V 1.8A D2PAK-2 CoolMOS C3 RoHS: Compliant | 0 | |
| SPB02N60C3 | Infineon Technologies AG | Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 11500 |
|
| SPB02N60C3ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 36000 |
|
| SPB02N60C3 DISTI # 1471779 | Infineon Technologies AG | RoHS: Compliant | 0 |
|
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: SPB02N60C3 OMO.#: OMO-SPB02N60C3-126 |
IGBT Transistors MOSFET N-Ch 600V 1.8A D2PAK-2 CoolMOS C3 |
|
|
Mfr.#: SPB021N04N OMO.#: OMO-SPB021N04N-1190 |
Жаңа және түпнұсқа |
|
Mfr.#: SPB02N60C3ATMA1 |
MOSFET N-CH 650V 1.8A D2PAK |
|
|
Mfr.#: SPB02N60S5 OMO.#: OMO-SPB02N60S5-1190 |
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
|
Mfr.#: SPB02N60S5ATMA1 |
MOSFET N-CH 600V 1.8A TO-263 |
|
|
Mfr.#: SPB02N60S5E3045A OMO.#: OMO-SPB02N60S5E3045A-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: SPB02N6OC3 OMO.#: OMO-SPB02N6OC3-1190 |
Жаңа және түпнұсқа |
