SPB02N60S5

SPB02N60S5
Mfr. #:
SPB02N60S5
Өндіруші:
Rochester Electronics, LLC
Сипаттама:
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
SPB02N60S5 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші
INF
Өнім санаты
FETs - жалғыз
Tags
SPB02N60S, SPB02N60, SPB02N, SPB02, SPB0, SPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ponent Stockers USA
1.8 A 600 V 3 ohm N-CHANNEL Si POWER MOSFET TO-263AB
***i-Key
MOSFET N-CH 600V 1.8A TO-263
***i-Key Marketplace
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***p One Stop
Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) D2PAK T/R
***el Electronic
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
***ment14 APAC
MOSFET, N, 600V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):3ohm; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:25W; Transistor Case Style:D2-PAK; Package / Case:D2-PAK; Power Dissipation Pd:25W; Pulse Current Idm:5.4A; Termination Type:SMD; Transistor Type:Enhancement; Voltage Vds:600V; Voltage Vds Typ:650V; Voltage Vgs Rds on Measurement:10V
***et
Trans MOSFET N-CH 650V 1.8A 3-Pin TO-263 T/R
***i-Key Marketplace
MOSFET N-CH 650V 1.8A TO263-3
*** Electronics
N-CHANNEL POWER MOSFET
***ineon
Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
Бөлім № Mfg. Сипаттама Қор Бағасы
SPB02N60S5ATMA1
DISTI # SPB02N60S5ATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 600V 1.8A TO-263
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
178In Stock
  • 100:$0.8994
  • 10:$1.1380
  • 1:$1.2800
SPB02N60S5ATMA1
DISTI # SPB02N60S5ATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 600V 1.8A TO-263
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
178In Stock
  • 100:$0.8994
  • 10:$1.1380
  • 1:$1.2800
SPB02N60S5ATMA1
DISTI # SPB02N60S5ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 600V 1.8A TO-263
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    SPB02N60S5Infineon Technologies AGPower Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant
    700
    • 1000:$0.3400
    • 500:$0.3600
    • 100:$0.3800
    • 25:$0.3900
    • 1:$0.4200
    SPB02N60S5
    DISTI # 726-SPB02N60S5
    Infineon Technologies AGMOSFET N-Ch 600V 1.8A D2PAK-2 CoolMOS S5
    RoHS: Compliant
    0
      Сурет Бөлім № Сипаттама
      SPB02N60C3

      Mfr.#: SPB02N60C3

      OMO.#: OMO-SPB02N60C3-126

      IGBT Transistors MOSFET N-Ch 600V 1.8A D2PAK-2 CoolMOS C3
      SPB021N04N

      Mfr.#: SPB021N04N

      OMO.#: OMO-SPB021N04N-1190

      Жаңа және түпнұсқа
      SPB02N60C3ATMA1

      Mfr.#: SPB02N60C3ATMA1

      OMO.#: OMO-SPB02N60C3ATMA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH 650V 1.8A D2PAK
      SPB02N60S5

      Mfr.#: SPB02N60S5

      OMO.#: OMO-SPB02N60S5-1190

      Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      SPB02N60S5ATMA1

      Mfr.#: SPB02N60S5ATMA1

      OMO.#: OMO-SPB02N60S5ATMA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH 600V 1.8A TO-263
      SPB02N60S5E3045A

      Mfr.#: SPB02N60S5E3045A

      OMO.#: OMO-SPB02N60S5E3045A-1190

      Жаңа және түпнұсқа
      SPB02N6OC3

      Mfr.#: SPB02N6OC3

      OMO.#: OMO-SPB02N6OC3-1190

      Жаңа және түпнұсқа
      Қол жетімділік
      Қор:
      Available
      Тапсырыс бойынша:
      1000
      Саны енгізіңіз:
      SPB02N60S5 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
      Анықтамалық баға (USD)
      Саны
      Тауар өлшемінің бағасы
      Қосымша. Бағасы
      1
      0,49 $
      0,49 $
      10
      0,47 $
      4,70 $
      100
      0,45 $
      44,54 $
      500
      0,42 $
      210,30 $
      1000
      0,40 $
      395,90 $
      2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
      -ден бастаңыз
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