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BSD316SNH6327XTSA1

BSD316SNH6327XTSA1
Mfr. #:
BSD316SNH6327XTSA1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET SMALL SIGNAL N-CH
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
BSD316SNH6327XTSA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BSD316SNH6327XTSA1 DatasheetBSD316SNH6327XTSA1 Datasheet (P4-P6)BSD316SNH6327XTSA1 Datasheet (P7-P9)
ECAD Model:
Көбірек ақпарат:
BSD316SNH6327XTSA1 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
SOT-363-6
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
30 V
Идентификатор - үздіксіз төгу тогы:
1.4 A
Rds On - ағызу көзіне қарсылық:
120 mOhms
Vgs th - Gate-Source шекті кернеуі:
1.2 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
600 pC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
500 mW (1/2 W)
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Қаптама:
Ролик
Биіктігі:
0.9 mm
Ұзындығы:
2 mm
Серия:
BSD316
Транзистор түрі:
1 N-Channel
Ені:
1.25 mm
Бренд:
Infineon Technologies
Форвард өткізгіштік - Мин:
2.3 S
Күз уақыты:
1 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
2.3 ns
Зауыттық буманың саны:
3000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
5.8 ns
Қосудың әдеттегі кешігу уақыты:
3.4 ns
Бөлім # Бүркеншік аттар:
BSD316SN H6327 SP000917668
Бірлік салмағы:
0.000265 oz
Tags
BSD316SNH, BSD316S, BSD316, BSD31, BSD3, BSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 1.4A Automotive 6-Pin SOT-363 T/R
***ment14 APAC
MOSFET, N-CH, AUTO, 30V, 1.4A, SOT363; Transistor Polarity:N Channel; Continuous Drain Current Id:1.4A; Source Voltage Vds:30V; On Resistance
***ineon
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
***nell
MOSFET, N-CH, AUTO, 30V, 1.4A, SOT363; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.4A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.12ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 500mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 2 Series; Automotive Qualification Standard: AEC-Q101; MSL: -; SVHC: No SVHC (27-Jun-2018)
***et Japan
Transistor MOSFET Array Dual N-CH 30V 1300mA 6-Pin SOT-363 T/R
***ure Electronics
DMN3190LDW: 30 V 190 mOhm Dual N-Channel Enhancement Mode Mosfet - SOT-363
*** Source Electronics
Trans MOSFET N-CH 30V 1A 6-Pin SOT-363 T/R / MOSFET 2N-CH 30V 1A SOT363
***ark
MOSFET, DUAL N-CH, 30V, 1A, SOT363; Channel Type:N Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:1A; Continuous Drain Current Id P Channel:1A RoHS Compliant: Yes
***el Electronic
Transistors - FETs, MOSFETs - Arrays 1 (Unlimited) Tape & Reel (TR) 6-TSSOP, SC-88, SOT-363 Surface Mount 2 N-Channel (Dual) Logic Level Gate -55°C~150°C TJ 190m Ω @ 1.3A, 10V 2.8V @ 250μA MOSFET 2N-CH 30V 1A SOT363
***nell
MOSFET, DUAL N-CH, 30V, 1A, SOT363; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 1A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.122ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 320mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***et
Transistor MOSFET Array Dual N-CH 30V 1300mA 6-Pin SOT-363 T/R
***ure Electronics
Dual N-Channel 30 V 190 mOhm Enhancement Mode Mosfet - SOT-363
***(Formerly Allied Electronics)
MOSFET Dual N-Ch 30V 1A Enhanc. SOT363
***des Inc SCT
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
***ark
Mosfet, Dual, N-Ch, 30V, 1A Rohs Compliant: Yes
***ure Electronics
Dual N-Channel 30 V 2.8 O 0.3 W SMT Enhancement Mode MosFet - SOT-363
***et
Transistor MOSFET Array Dual N-CH 30V 260mA 6-Pin SOT-363 T/R
*** Source Electronics
Trans MOSFET N-CH 30V 0.26A 6-Pin SOT-363 T/R / MOSFET 2N-CH 30V 0.22A SOT363
***ment14 APAC
MOSFET, AEC-Q101, DUAL N-CH, 30V, SOT363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:260mA; Source Voltage Vds:30V; On
***nell
MOSFET, AEC-Q101, DUAL N-CH, 30V, SOT363; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 260mA; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 2.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 400mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***emi
Small Signal MOSFET 30V 3.2A 60 mOhm Single N-Channel SC−88/SC70−6/SOT−363
***ser
MOSFETs- Power and Small Signal NFET 30V 3.2A 60MOHM
***Yang
Trans MOSFET N-CH 30V 2.6A 6-Pin SC-88 T/R - Tape and Reel
***ponent Stockers USA
1800 mA 30 V N-CHANNEL Si SMALL SIGNAL MOSFET
***r Electronics
Small Signal Field-Effect Transistor, 1.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***or
MOSFET N-CH 30V 1.8A SC88/SC70-6
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:2.6A; On Resistance, Rds(on):45mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:6-SC-88 ;RoHS Compliant: Yes
*** Source Electronics
Trans MOSFET N/P-CH 30V 0.7A/0.4A 6-Pin SC-70 T/R / MOSFET N/P-CH 30V SOT363
***roFlash
Small Signal Field-Effect Transistor, 0.7A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
MOSFET, NP CH, 30V, W DIODE, SOT363; Transistor Polarity:N and P Channel; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:340mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-363; No. of Pins:6; Continuous Drain Current Id:700mA; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):0.323ohm; Power Dissipation Pd:340mW
***(Formerly Allied Electronics)
Si1416EDH-T1-GE3 N-channel MOSFET Transistor; 3.9 A; 30 V; 6-Pin SOT-363
***ure Electronics
SI1416EDH Series N-Channel 30 V 3.9 A 12 nC Surface Mount Mosfet - SC-70-6
***nell
MOSFET, N-CH, 30V, 3.9A, SOT-363-6; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.9A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.047ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.4V; Power Dissipation Pd: 2.8W; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jun-2015)
Small Signal Power MOSFETs
Infineon Small Signal Power MOSFETs are available in 7 industry-standard package types ranging from the largest SOT-223 down to the smallest SOT-363 measuring 2.1mm x 2mm x 0.9mm. These are offered in single, dual and complementary configurations. They are available in N-Channel, P-Channel or Complementary (both P-Channel and N-Channel within the same package) versions to meet a variety of design requirements. Typical applications for these devices include battery protection, LED lighting, low voltage drives, and DC/DC converters. Each of these Small Signal Power MOSFETs are also qualified to Automotive AEC Q101.Learn More
Бөлім № Mfg. Сипаттама Қор Бағасы
BSD316SNH6327XTSA1
DISTI # 31053880		Infineon Technologies AGTrans MOSFET N-CH 30V 1.4A Automotive 6-Pin SOT-363 T/R
RoHS: Compliant		6000
  • 99000:$0.0576
  • 45000:$0.0595
  • 24000:$0.0662
  • 9000:$0.0710
  • 3000:$0.0778
BSD316SNH6327XTSA1
DISTI # BSD316SNH6327XTSA1-ND		Infineon Technologies AGMOSFET N-CH 30V 1.4A SOT363
RoHS: Compliant
Min Qty: 9000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 9000:$0.0888
BSD316SNH6327XTSA1
DISTI # C1S322000396401		Infineon Technologies AGTrans MOSFET N-CH 30V 1.4A Automotive 6-Pin SOT-363 T/R
RoHS: Compliant		6000
  • 6000:$0.0738
  • 3000:$0.0804
BSD316SNH6327XTSA1
DISTI # BSD316SNH6327XTSA1		Infineon Technologies AGTrans MOSFET N-CH 30V 1.4A 6-Pin SOT-363 T/R - Tape and Reel (Alt: BSD316SNH6327XTSA1)
RoHS: Compliant
Min Qty: 9000
Container: Reel		Americas - 0
  • 9000:$0.0548
  • 15000:$0.0528
  • 24000:$0.0509
  • 45000:$0.0492
  • 90000:$0.0483
BSD316SNH6327XTSA1
DISTI # 49AC0108		Infineon Technologies AGMOSFET, N-CH, AUTO, 30V, 1.4A, SOT363,Transistor Polarity:N Channel,Continuous Drain Current Id:1.4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.12ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power RoHS Compliant: Yes21904
  • 1:$0.3900
  • 10:$0.2700
  • 25:$0.2210
  • 50:$0.1730
  • 100:$0.1240
  • 250:$0.1140
  • 500:$0.1050
  • 1000:$0.0950
BSD316SN H6327
DISTI # 726-BSD316SNH6327		Infineon Technologies AGMOSFET SMALL SIGNAL N-CH
RoHS: Compliant		2812
  • 1:$0.3900
  • 10:$0.2500
  • 100:$0.1070
  • 1000:$0.0830
BSD316SNH6327XTSA1
DISTI # 726-BSD316SNH6327XTS		Infineon Technologies AGMOSFET SMALL SIGNAL N-CH
RoHS: Compliant		8675
  • 1:$0.3900
  • 10:$0.2700
  • 100:$0.1240
  • 1000:$0.0950
  • 3000:$0.0810
BSD316SNH6327XTSA1
DISTI # 2839433		Infineon Technologies AGMOSFET, N-CH, AUTO, 30V, 1.4A, SOT363
RoHS: Compliant		21904
  • 5:£0.2340
  • 25:£0.2250
  • 100:£0.0983
  • 250:£0.0930
  • 500:£0.0770
BSD316SNH6327XTSA1
DISTI # 2839433		Infineon Technologies AGMOSFET, N-CH, AUTO, 30V, 1.4A, SOT363
RoHS: Compliant		21905
  • 5:$0.4650
  • 25:$0.3480
  • 100:$0.2230
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Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
1988
Саны енгізіңіз:
BSD316SNH6327XTSA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
0,38 $
0,38 $
10
0,27 $
2,70 $
100
0,12 $
12,40 $
1000
0,10 $
95,00 $
2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
-ден бастаңыз
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