BSD316S

BSD316SNH6327XTSA1 vs BSD316SN H6327 vs BSD316SNL6327XT

 
PartNumberBSD316SNH6327XTSA1BSD316SN H6327BSD316SNL6327XT
DescriptionMOSFET SMALL SIGNAL N-CHMOSFET SMALL SIGNAL N-CHMOSFET N-CH 30V 1.4A SOT-363
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-363-6SOT-363-6-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current1.4 A1.4 A-
Rds On Drain Source Resistance120 mOhms120 mOhms-
Vgs th Gate Source Threshold Voltage1.2 V1.2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge600 pC600 pC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation500 mW (1/2 W)500 mW (1/2 W)-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height0.9 mm0.9 mm-
Length2 mm2 mm-
SeriesBSD316BSD316-
Transistor Type1 N-Channel1 N-Channel-
Width1.25 mm1.25 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min2.3 S2.3 S-
Fall Time1 ns1 ns-
Product TypeMOSFETMOSFET-
Rise Time2.3 ns2.3 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time5.8 ns5.8 ns-
Typical Turn On Delay Time3.4 ns3.4 ns-
Part # AliasesBSD316SN H6327 SP000917668BSD316SNH6327XTSA1 SP000917668-
Unit Weight0.000265 oz0.000265 oz-
Өндіруші Бөлім № Сипаттама RFQ
Infineon Technologies
Infineon Technologies
BSD316SNH6327XTSA1 MOSFET SMALL SIGNAL N-CH
BSD316SN H6327 MOSFET SMALL SIGNAL N-CH
BSD316SNH6327XTSA1 MOSFET N-CH 30V 1.4A SOT363
BSD316SNL6327XT MOSFET N-CH 30V 1.4A SOT-363
BSD316SN Жаңа және түпнұсқа
BSD316SN H6327 MOSFET SMALL SIGNAL N-CH
BSD316SN L6327 MOSFET N-Ch 30V 1.4A SOT-363-6
BSD316SN6327 Жаңа және түпнұсқа
BSD316SNH6327 Жаңа және түпнұсқа
BSD316SNL6327 Жаңа және түпнұсқа
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