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| PartNumber | BSD316SN H6327 | BSD316SN | BSD316SN L6327 |
| Description | MOSFET SMALL SIGNAL N-CH | MOSFET N-Ch 30V 1.4A SOT-363-6 | |
| Manufacturer | Infineon | Infineon Technologies | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-363-6 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 1.4 A | - | - |
| Rds On Drain Source Resistance | 120 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 600 pC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 500 mW (1/2 W) | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Reel | - |
| Height | 0.9 mm | - | - |
| Length | 2 mm | - | - |
| Series | BSD316 | BSD316 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 1.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 2.3 S | - | - |
| Fall Time | 1 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 2.3 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 5.8 ns | - | - |
| Typical Turn On Delay Time | 3.4 ns | - | - |
| Part # Aliases | BSD316SNH6327XTSA1 SP000917668 | - | - |
| Unit Weight | 0.000265 oz | - | - |
| Part Aliases | - | BSD316SNH6327XTSA1 SP000917668 | - |