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IPB020N04N G

IPB020N04N G
Mfr. #:
IPB020N04N G
Өндіруші:
Infineon Technologies
Сипаттама:
Darlington Transistors MOSFET N-Ch 40V 140A D2PAK-6 OptiMOS 3
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IPB020N04N G Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
IPB020N04N G Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші
Infineon Technologies
Өнім санаты
Транзисторлар - FETs, MOSFETs - Бірыңғай
Сериялар
OptiMOS 3
Қаптама
Ролик
Бөлік бүркеншік аттар
IPB020N04NGATMA1 IPB020N04NGXT SP000359157
Бірлік-салмағы
0.056438 oz
Монтаждау стилі
SMD/SMT
Сауда атауы
OptiMOS
Пакет-қорап
TO-263-7
Технология
Си
Арналар саны
1 Channel
Конфигурация
Бір квинт көзі
Транзистор түрі
1 N-Channel
Pd-қуат-диссипация
167 W
Максималды-жұмыс температурасы
+ 175 C
Ең төменгі жұмыс температурасы
- 55 C
Күз уақыты
7.8 ns
Көтерілу уақыты
6.4 ns
Vgs-қақпа-көзі-кернеу
20 V
Id-үздіксіз-ағызу-ток
140 A
Vds-ағызу-көз-бұзу-кернеу
40 V
Rds-On-Drain-Source-Resistance
2 mOhms
Транзистор-полярлық
N-арна
Әдеттегі-өшіру-кідірту уақыты
40 ns
Әдеттегі-қосу-кешігу-уақыты
27 ns
Арна режимі
Жақсарту
Tags
IPB020N04NG, IPB020N04, IPB020N0, IPB020, IPB02, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Бөлім № Mfg. Сипаттама Қор Бағасы
IPB020N04NGATMA1
DISTI # V72:2272_06383286		Infineon Technologies AGTrans MOSFET N-CH 40V 140A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		3890
  • 3000:$1.4473
  • 1000:$1.4625
  • 500:$1.4780
  • 250:$1.8223
  • 100:$1.8428
  • 25:$2.1990
  • 10:$2.2253
  • 1:$2.4270
IPB020N04NGATMA1
DISTI # IPB020N04NGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 40V 140A TO263-7
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		155In Stock
  • 500:$1.6247
  • 100:$2.0889
  • 10:$2.5990
  • 1:$2.8800
IPB020N04NGATMA1
DISTI # IPB020N04NGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 40V 140A TO263-7
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		155In Stock
  • 500:$1.6247
  • 100:$2.0889
  • 10:$2.5990
  • 1:$2.8800
IPB020N04NGATMA1
DISTI # IPB020N04NGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 40V 140A TO263-7
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		On Order
  • 1000:$1.3069
IPB020N04NGATMA1
DISTI # 29552848		Infineon Technologies AGTrans MOSFET N-CH 40V 140A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		3890
  • 3000:$1.4473
  • 1000:$1.4625
  • 500:$1.4780
  • 250:$1.8223
  • 100:$1.8428
  • 25:$2.1990
  • 10:$2.2253
  • 6:$2.4270
IPB020N04NGATMA1
DISTI # IPB020N04NGATMA1		Infineon Technologies AGMV POWER MOS - Tape and Reel (Alt: IPB020N04NGATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$1.1799
  • 2000:$1.1379
  • 4000:$1.0959
  • 6000:$1.0599
  • 10000:$1.0409
IPB020N04NGATMA1
DISTI # SP000359157		Infineon Technologies AGMV POWER MOS (Alt: SP000359157)
RoHS: Compliant
Min Qty: 1000		Europe - 0
  • 1000:€1.4849
  • 2000:€1.1539
  • 4000:€1.0709
  • 6000:€1.0379
  • 10000:€0.9969
IPB020N04N G
DISTI # 726-IPB020N04NG		Infineon Technologies AGMOSFET N-Ch 40V 140A D2PAK-6 OptiMOS 3
RoHS: Compliant		0
  • 1:$2.4200
  • 10:$2.0500
  • 100:$1.6400
  • 500:$1.4400
  • 1000:$1.1900
IPB020N04NGATMA1Infineon Technologies AGPower Field-Effect Transistor, 140A I(D), 40V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
RoHS: Compliant		35852
  • 1000:$0.9900
  • 500:$1.0400
  • 100:$1.0800
  • 25:$1.1300
  • 1:$1.2200
IPB020N04NGATMA1
DISTI # 8977377P		Infineon Technologies AGMOSFET N-CHANNEL 40V 140A OPTIMOS TO263, RL275
  • 50:£1.4820
  • 250:£1.1840
  • 500:£1.0400
  • 1250:£0.8680
IPB020N04NGATMA1
DISTI # C1S322000652273		Infineon Technologies AGTrans MOSFET N-CH 40V 140A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		3890
  • 250:$1.8223
  • 100:$1.8428
  • 25:$2.1990
  • 10:$2.2253
  • 1:$2.4270
Сурет Бөлім № Сипаттама
IPB020N10N5ATMA1

Mfr.#: IPB020N10N5ATMA1

OMO.#: OMO-IPB020N10N5ATMA1

 MOSFET N-Ch 100V 120A D2PAK-2
IPB020N10N5LFATMA1

Mfr.#: IPB020N10N5LFATMA1

OMO.#: OMO-IPB020N10N5LFATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 100V D2PAK-3
IPB020N08N5ATMA1-CUT TAPE

Mfr.#: IPB020N08N5ATMA1-CUT TAPE

OMO.#: OMO-IPB020N08N5ATMA1-CUT-TAPE-1190

 Жаңа және түпнұсқа
IPB020N04NG

Mfr.#: IPB020N04NG

OMO.#: OMO-IPB020N04NG-1190

 Жаңа және түпнұсқа
IPB020N08N5

Mfr.#: IPB020N08N5

OMO.#: OMO-IPB020N08N5-1190

 N-CH 80V 120A 2mOhm TO263-3
IPB020N10N5

Mfr.#: IPB020N10N5

OMO.#: OMO-IPB020N10N5-1190

 Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) TO-263
IPB020NE7N3G

Mfr.#: IPB020NE7N3G

OMO.#: OMO-IPB020NE7N3G-1190

 Power Field-Effect Transistor, 120A I(D), 75V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IPB020NE7N3G(020NE7N)

Mfr.#: IPB020NE7N3G(020NE7N)

OMO.#: OMO-IPB020NE7N3G-020NE7N--1190

 Жаңа және түпнұсқа
IPB020NE7N3GATMA1

Mfr.#: IPB020NE7N3GATMA1

OMO.#: OMO-IPB020NE7N3GATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 75V 120A TO263-3
IPB020N10N5ATMA1

Mfr.#: IPB020N10N5ATMA1

OMO.#: OMO-IPB020N10N5ATMA1-INFINEON-TECHNOLOGIES

 IGBT Transistors MOSFET N-Ch 100V 120A D2PAK-2
Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
1000
Саны енгізіңіз:
IPB020N04N G ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
1,78 $
1,78 $
10
1,70 $
16,96 $
100
1,61 $
160,65 $
500
1,52 $
758,65 $
1000
1,43 $
1 428,00 $
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