| PartNumber | TPN2R703NL,L1Q | TPN2R805PL,L1Q | TPN2R903PL,L1Q |
| Description | MOSFET X35PBF Power MOSFET Trans VGS4.5VVDS30V | MOSFET U-MOSIX-H 45V 139A 39nC MOSFET | MOSFET X35 Pb-F POWER MOSFET TRANSISTOR TSON-ADV PD=75W F=1MHZ |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | - | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TSON-Advance-8 | TSON-Advance-8 | TSON-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 45 V | 30 V |
| Id Continuous Drain Current | 45 A | 139 A | 122 A |
| Rds On Drain Source Resistance | 3.3 mOhms | 2.2 mOhms | 2.9 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.3 V | 1.4 V | 1.1 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 21 nC | 39 nC | 26 nC |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | + 175 C | + 175 C |
| Pd Power Dissipation | 42 W | 104 W | 75 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Height | 0.85 mm | - | - |
| Length | 3.1 mm | - | - |
| Series | TPN2R703NL | TPN2R805PL | TPN2R903PL |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 3.1 mm | - | - |
| Brand | Toshiba | Toshiba | Toshiba |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.000705 oz | 0.000705 oz | - |
| Fall Time | - | 12 ns | 8.2 ns |
| Rise Time | - | 7.4 ns | 4.7 ns |
| Typical Turn Off Delay Time | - | 34 ns | 30 ns |
| Typical Turn On Delay Time | - | 17 ns | 12 ns |