STP18N60M

STP18N60M2 vs STP18N60M6 vs STP18N60M2 18N60M2

 
PartNumberSTP18N60M2STP18N60M6STP18N60M2 18N60M2
DescriptionMOSFET N-CH 600V 0.255Ohm 13A MDmesh M2MOSFET
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETMOSFET-
RoHSY--
TechnologySi--
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V600 V-
Id Continuous Drain Current13 A13 A-
Rds On Drain Source Resistance255 mOhms280 mOhms-
Vgs th Gate Source Threshold Voltage3 V3.25 V-
Vgs Gate Source Voltage25 V25 V-
Qg Gate Charge21.5 nC16.8 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation110 W110 W-
ConfigurationSingleSingle-
PackagingTube--
SeriesSTP18N60M2--
Transistor Type1 N-Channel1 N-Channel-
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time10.6 ns9 ns-
Product TypeMOSFETMOSFET-
Rise Time9 ns7 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time47 ns28 ns-
Typical Turn On Delay Time12 ns16 ns-
Unit Weight0.011640 oz--
Channel Mode-Enhancement-
Өндіруші Бөлім № Сипаттама RFQ
STMicroelectronics
STMicroelectronics
STP18N60M2 MOSFET N-CH 600V 0.255Ohm 13A MDmesh M2
STP18N60M6 MOSFET
STP18N60M2 MOSFET N-CH 600V TO-220
STP18N60M2 18N60M2 Жаңа және түпнұсқа
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