 |  | | |
| PartNumber | SIHP38N60EF-GE3 | SIHP38N60E-GE3 | SIHP5N50D-E3 |
| Description | MOSFET 600V Vds 30V Vgs TO-220AB | MOSFET 600V Vds 30V Vgs TO-220AB | MOSFET 500V Vds 30V Vgs TO-220AB |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220AB-3 | TO-220AB-3 | TO-220AB-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | 500 V |
| Id Continuous Drain Current | 40 A | 43 A | 5.3 A |
| Rds On Drain Source Resistance | 70 mOhms | 56 mOhms | 1.5 Ohms |
| Vgs th Gate Source Threshold Voltage | 2 V | 4 V | 5 V |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Qg Gate Charge | 189 nC | 122 nC | 10 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 313 W | 313 W | 104 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Series | EF | E | D |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 13 S | - | - |
| Fall Time | 67 ns | 50 ns | 11 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 63 ns | 58 ns | 11 ns |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 143 ns | 116 ns | 14 ns |
| Typical Turn On Delay Time | 35 ns | 33 ns | 12 ns |
| Packaging | - | Tube | Tube |
| Factory Pack Quantity | - | 1000 | 50 |
| Unit Weight | - | 0.063493 oz | 0.211644 oz |
| Height | - | - | 15.49 mm |
| Length | - | - | 10.41 mm |
| Width | - | - | 4.7 mm |
| Part # Aliases | - | - | SIHP5N50D-GE3 |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHP38N60EF-GE3 | MOSFET 600V Vds 30V Vgs TO-220AB | |
| SIHP6N80E-GE3 | MOSFET 800V Vds 30V Vgs TO-220AB | ||
| SIHP38N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
| SIHP6N40D-GE3 | MOSFET 400V Vds 30V Vgs TO-220AB | ||
| SIHP5N50D-E3 | MOSFET 500V Vds 30V Vgs TO-220AB | ||
| SIHP6N40D-E3 | MOSFET 400V Vds 30V Vgs TO-220AB | ||
| SIHP8N50D-E3 | MOSFET 500V Vds 30V Vgs TO-220AB | ||
| SIHP690N60E-GE3 | MOSFET E Series Power MOSFET | ||
| SIHP5N50D-GE3 | MOSFET 500V Vds 30V Vgs TO-220AB | ||
| SIHP6N65E-GE3 | MOSFET 650V Vds 30V Vgs TO-220AB | ||
| SIHP7N60E-E3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
| SIHP7N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
Vishay |
SIHP7N60E-GE3 | Darlington Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS | |
| SIHP8N50D-E3 | Darlington Transistors MOSFET 500V 850mOhm@10V 8.7A N-Ch D-SRS | ||
| SIHP6N65E-GE3 | IGBT Transistors MOSFET 650V 600mOhm@10V 7A N-Ch E-SRS | ||
| SIHP6N40D-GE3 | IGBT Transistors MOSFET N-CHANNEL 400V | ||
| SIHP5N50D-GE3 | IGBT Transistors MOSFET 500V 5A 1.5Ohm @ 10V | ||
| SIHP7N60E-E3 | RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS | ||
| SIHP6N40D-E3 | RF Bipolar Transistors MOSFET 400V 1ohm@10V 6A N-Ch D-SRS | ||
| SIHP8N50D-GE3 | MOSFET N-CH 500V 8.7A TO220AB | ||
| SIHP5N50D-E3 | MOSFET N-CH 500V 5.3A TO220AB | ||
| SIHP38N60E-GE3 | Power MOSFET | ||
| SIHP4N80E-GE3 | MOSFET N-CHAN 800V TO-220AB | ||
| SIHP6N80E-GE3 | MOSFET N-CHAN 800V TO-220AB | ||
| SIHP5N50D | Жаңа және түпнұсқа | ||
| SIHP6N40D | Жаңа және түпнұсқа | ||
| SIHP7N60EGE3 | Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| SIHP8N50DGE3 | Power Field-Effect Transistor, 8.7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |