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| PartNumber | SIHG30N60E-E3 | SIHG30N60E-GE3 |
| Description | MOSFET 600V Vds 30V Vgs TO-247AC | MOSFET 600V Vds 30V Vgs TO-247AC |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-247AC-3 | TO-247AC-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V |
| Id Continuous Drain Current | 29 A | 29 A |
| Rds On Drain Source Resistance | 125 mOhms | 125 mOhms |
| Vgs th Gate Source Threshold Voltage | 4 V | 4 V |
| Vgs Gate Source Voltage | 30 V | 30 V |
| Qg Gate Charge | 85 nC | 85 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 250 W | 250 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Tube | Tube |
| Series | E | E |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 36 ns | 36 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 32 ns | 32 ns |
| Factory Pack Quantity | 500 | 500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 63 ns | 63 ns |
| Typical Turn On Delay Time | 19 ns | 19 ns |
| Unit Weight | 1.340411 oz | 1.340411 oz |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHG30N60E-E3 | MOSFET 600V Vds 30V Vgs TO-247AC | |
| SIHG30N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-247AC | ||
Vishay |
SIHG30N60E-E3 | RF Bipolar Transistors MOSFET N-Channel 600V | |
| SIHG30N60E-GE3 | MOSFET N-CH 600V 29A TO247AC | ||
| SIHG30N60E | Жаңа және түпнұсқа | ||
| SIHG30N60EGE3 | Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC |