PartNumber | SIHG039N60EF-GE3 | SIHG039N60E-GE3 | SIHG018N60E-GE3 |
Description | MOSFET EF Series Power MOSFET With Fast Body Diode; 4th Gen E Series Technology | MOSFET 650V Vds; 30V Vgs TO-247AC | MOSFET 600V Vds 30V Vgs TO-247AC |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247AC-3 | TO-247AC-3 | TO-247AC-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
Id Continuous Drain Current | 61 A | 63 A | 99 A |
Rds On Drain Source Resistance | 40 mOhms | 39 mOhms | 23 mOhms |
Vgs th Gate Source Threshold Voltage | 3 V | 3 V | 3 V |
Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
Qg Gate Charge | 84 nC | 126 nC | 228 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 357 W | 357 W | 524 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | Tube | Tube |
Series | EF | E | E |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 18 S | 17 S | 25 S |
Fall Time | 78 ns | 94 ns | 84 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 172 ns | 126 ns | 197 ns |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 152 ns | 176 ns | 177 ns |
Typical Turn On Delay Time | 109 ns | 79 ns | 132 ns |
Өндіруші | Бөлім № | Сипаттама | RFQ |
---|---|---|---|
Vishay / Siliconix |
SIHG039N60EF-GE3 | MOSFET EF Series Power MOSFET With Fast Body Diode; 4th Gen E Series Technology | |
SIHG065N60E-GE3 | MOSFET 650V Vds; 30V Vgs TO-247AC | ||
SIHG039N60E-GE3 | MOSFET 650V Vds; 30V Vgs TO-247AC | ||
SIHG180N60E-GE3 | MOSFET 650V Vds; 30V Vgs TO-247AC | ||
SIHG120N60E-GE3 | MOSFET 650V Vds; 30V Vgs TO-247AC | ||
SIHG050N60E-GE3 | MOSFET 650V Vds 30V Vgs TO-247AC | ||
SIHG11N80E-GE3 | MOSFET 800V Vds 30V Vgs TO-247AC | ||
SIHG17N80E-GE3 | MOSFET 800V Vds 30V Vgs TO-247AC | ||
SIHG20N50C-E3 | MOSFET 500V Vds 30V Vgs TO-247AC | ||
SIHG20N50E-GE3 | MOSFET 500V Vds 30V Vgs TO-247AC | ||
SIHG14N50D-GE3 | MOSFET 500V Vds 30V Vgs TO-247AC | ||
SIHG16N50C-E3 | MOSFET 500V Vds 30V Vgs TO-247AC | ||
SIHG14N50D-E3 | MOSFET 500V Vds 30V Vgs TO-247AC | ||
SIHG17N60D-GE3 | MOSFET 600V Vds 30V Vgs TO-247AC | ||
SIHG21N60EF-GE3 | MOSFET 600V Vds 30V Vgs TO-247AC | ||
SIHG018N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-247AC | ||
SIHG100N60E-GE3 | MOSFET 650V Vds; 30V Vgs TO-247AC | ||
SIHG21N80AE-GE3 | MOSFET E Series Power MOSFET | ||
SIHG21N65EF-GE3 | MOSFET 650V Vds 30V Vgs TO-247AC | ||
SIHG17N60D-E3 | MOSFET 600V Vds 30V Vgs TO-247AC | ||
Vishay |
SIHG16N50C-E3 | Darlington Transistors MOSFET N-Channel 500V | |
SIHG20N50E-GE3 | IGBT Transistors MOSFET N-Channel 500V | ||
SIHG14N50D-GE3 | RF Bipolar Transistors MOSFET MOSFET N-CHANNEL 500V | ||
SIHG14N50D-E3 | RF Bipolar Transistors MOSFET 500V 400mOhm@10V 14A N-Ch D-SRS | ||
SIHG21N65EF-GE3 | MOSFET N-CH 650V 21A TO-247AC | ||
SIHG17N60D-E3 | MOSFET N-CH 600V 17A TO247AC | ||
SIHG17N60D-GE3 | MOSFET N-CH 600V 17A TO247AC | ||
SIHG20N50C-E3 | MOSFET N-CH 500V 20A TO247 | ||
SIHG21N60EF-GE3 | MOSFET N-CH 600V 21A TO-247AC | ||
SIHG018N60E-GE3 | MOSFET N-CHAN 650V TO247AC | ||
SIHG039N60E-GE3 | E Series Power MOSFET TO247AC, 39 m @ 10V | ||
SIHG050N60E-GE3 | E Series Power MOSFET TO247AC, 50 m @ 10V | ||
SIHG065N60E-GE3 | E Series Power MOSFET TO247AC, 65 m @ 10V | ||
SIHG100N60E-GE3 | E Series Power MOSFET TO247AC, 100 m @ 10V | ||
SIHG11N80E-GE3 | MOSFET N-CH 800V 12A TO247AC | ||
SIHG120N60E-GE3 | E Series Power MOSFET TO247AC, 120 m @ 10V | ||
SIHG15N60E-GE3 | E Series Power MOSFET | ||
SIHG17N80E-GE3 | MOSFET N-CH 800V 15A TO247AC | ||
SIHG180N60E-GE3 | E Series Power MOSFET TO247AC, 180 m @ 10V | ||
SIHG0603-R10N | Жаңа және түпнұсқа | ||
SIHG14N50D | Жаңа және түпнұсқа | ||
SIHG20N20C-E3 | Жаңа және түпнұсқа | ||
SIHG20N50 | Жаңа және түпнұсқа | ||
SIHG20N50-C | Жаңа және түпнұсқа | ||
SIHG20N50C | Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | ||
SIHG20N50C G20N50C | Жаңа және түпнұсқа | ||
SIHG20N50C-3 | Жаңа және түпнұсқа | ||
SIHG20N50C-E3,SIHG20N50C | Жаңа және түпнұсқа | ||
SIHG20N50C3-E3 | Жаңа және түпнұсқа | ||
SIHG20N50G | Жаңа және түпнұсқа |