 |  | | |
| PartNumber | SIHB15N60E-GE3 | SIHB15N60E-GE3-CUT TAPE | SIHB15N60E |
| Description | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 650 V | - | - |
| Id Continuous Drain Current | 15 A | - | - |
| Rds On Drain Source Resistance | 280 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 39 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 180 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Series | E | - | - |
| Brand | Vishay / Siliconix | - | - |
| Fall Time | 22 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 26 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 41 ns | - | - |
| Typical Turn On Delay Time | 16 ns | - | - |
| Unit Weight | 0.050717 oz | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHB15N60E-GE3 | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | |
| SIHB15N60E-GE3-CUT TAPE | Жаңа және түпнұсқа | ||
| SIHB15N60E | Жаңа және түпнұсқа | ||
| SIHB15N60EGE3 | Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
Vishay |
SIHB15N60E-GE3 | MOSFET N-CH 600V 15A DPAK |