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| PartNumber | SIHB15N60E-GE3 | SIHB15N65E-GE3 |
| Description | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | MOSFET 650V Vds 30V Vgs D2PAK (TO-263) |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 700 V |
| Id Continuous Drain Current | 15 A | 15 A |
| Rds On Drain Source Resistance | 280 mOhms | 280 mOhms |
| Vgs th Gate Source Threshold Voltage | 4 V | 4 V |
| Vgs Gate Source Voltage | 30 V | 30 V |
| Qg Gate Charge | 39 nC | 48 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 180 W | 34 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Bulk |
| Series | E | E |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 22 ns | 25 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 26 ns | 24 ns |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 41 ns | 48 ns |
| Typical Turn On Delay Time | 16 ns | 18 ns |
| Unit Weight | 0.050717 oz | 0.050717 oz |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHB15N60E-GE3 | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | |
| SIHB15N65E-GE3 | MOSFET 650V Vds 30V Vgs D2PAK (TO-263) | ||
Vishay |
SIHB15N65E-GE3 | RF Bipolar Transistors MOSFET 650V 280mOhm@10V 15A N-Ch E-SRS | |
| SIHB15N60E-GE3 | MOSFET N-CH 600V 15A DPAK | ||
| SIHB15N60E-GE3-CUT TAPE | Жаңа және түпнұсқа | ||
| SIHB15N60E | Жаңа және түпнұсқа | ||
| SIHB15N60EGE3 | Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| SIHB15N65E | Жаңа және түпнұсқа |