PartNumber | SIHB12N50E-GE3 | SIHB12N60E-GE3 | SIHB12N50C-E3 |
Description | MOSFET 500V Vds 30V Vgs D2PAK (TO-263) | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | MOSFET N-Channel 500V |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 550 V | 650 V | 560 V |
Id Continuous Drain Current | 10.5 A | 12 A | 12 A |
Rds On Drain Source Resistance | 380 mOhms | 380 mOhms | 555 mOhms |
Vgs th Gate Source Threshold Voltage | 4 V | 4 V | 5 V |
Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
Qg Gate Charge | 25 nC | 29 nC | 32 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 114 W | 147 W | 208 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Bulk | Tube | Bulk |
Series | E | E | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Fall Time | 12 ns | 19 ns | 6 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 16 ns | 19 ns | 35 ns |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 29 ns | 35 ns | 23 ns |
Typical Turn On Delay Time | 13 ns | 14 ns | 18 ns |
Unit Weight | 0.050717 oz | 0.050717 oz | 0.050717 oz |