 | | | |
| PartNumber | SIA519 | SIA519EDJ | SIA519EDJ-T1 |
| Description | |||
| Manufacturer | - | - | |
| Product Category | - | - | FETs - Arrays |
| Series | - | - | TrenchFETR |
| Packaging | - | - | Digi-ReelR Alternate Packaging |
| Part Aliases | - | - | SIA519EDJ-GE3 |
| Unit Weight | - | - | 0.000988 oz |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | PowerPAKR SC-70-6 Dual |
| Technology | - | - | Si |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Number of Channels | - | - | 2 Channel |
| Supplier Device Package | - | - | PowerPAKR SC-70-6 Dual |
| Configuration | - | - | 1 N-Channel 1 P-Channel |
| FET Type | - | - | N and P-Channel |
| Power Max | - | - | 7.8W |
| Transistor Type | - | - | 1 N-Channel 1 P-Channel |
| Drain to Source Voltage Vdss | - | - | 20V |
| Input Capacitance Ciss Vds | - | - | 350pF @ 10V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 4.5A |
| Rds On Max Id Vgs | - | - | 40 mOhm @ 4.2A, 4.5V |
| Vgs th Max Id | - | - | 1.4V @ 250μA |
| Gate Charge Qg Vgs | - | - | 12nC @ 10V |
| Pd Power Dissipation | - | - | 7.8 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Id Continuous Drain Current | - | - | 4.5 A |
| Vds Drain Source Breakdown Voltage | - | - | 20 V |
| Rds On Drain Source Resistance | - | - | 33 mOhms 74 mOhms |
| Transistor Polarity | - | - | N-Channel P-Channel |
| Qg Gate Charge | - | - | 7.7 nC 10.5 nC |
| Forward Transconductance Min | - | - | 7 S 12 S |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIA519EDJ-T1-GE3 | MOSFET -20V Vds 12V Vgs PowerPAK SC-70 | |
| SIA519 | Жаңа және түпнұсқа | ||
| SIA519EDJ | Жаңа және түпнұсқа | ||
| SIA519EDJ-T1 | Жаңа және түпнұсқа | ||
Vishay |
SIA519EDJ-T1-GE3 | MOSFET N/P-CH 20V 4.5A SC70-6 |