 |  | | |
| PartNumber | SI2309DS | SI2309DS , M1MA151KT2 | SI2309DS-T1 |
| Description | MOSFET Plastic-Encapsulated MOSFET P-CH-60V | MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3 | |
| Manufacturer | Rectron | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Packaging | Reel | - | - |
| Brand | Rectron | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Rectron |
SI2309DS | MOSFET Plastic-Encapsulated MOSFET P-CH-60V | |
Vishay / Siliconix |
SI2309DS-T1-E3 | MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3 | |
| SI2309DS | MOSFET Plastic-Encapsulated MOSFET P-CH-60V | ||
| SI2309DS , M1MA151KT2 | Жаңа және түпнұсқа | ||
| SI2309DS-T1 | MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3 | ||
| SI2309DS-T1-GE3 | P CH MOSFET, Transistor Polarity:P Channel, Continuous Drain Current Id:-1.25A, Drain Source Voltage Vds:-60V, On Resistance Rds(on):275mohm, Rds(on) Test Voltage Vgs:-10V, Threshold Voltage Vgs | ||
| SI2309DS-TI | Жаңа және түпнұсқа | ||
| SI2309DS-TI-E3 | Жаңа және түпнұсқа | ||
| SI2309DST1 | Small Signal Field-Effect Transistor, 0.00125A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 | ||
Vishay |
SI2309DS-T1-E3 | MOSFET P-CH 60V 1.25A SOT23-3 |