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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| SI2309DS-T1-E3 DISTI # SI2309DS-T1-E3TR-ND | Vishay Siliconix | MOSFET P-CH 60V 1.25A SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI2309DS-T1-E3 DISTI # SI2309DS-T1-E3CT-ND | Vishay Siliconix | MOSFET P-CH 60V 1.25A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| SI2309DS-T1-E3 DISTI # SI2309DS-T1-E3DKR-ND | Vishay Siliconix | MOSFET P-CH 60V 1.25A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| SI2309DS-T1-GE3 DISTI # 15R4907 | Vishay Intertechnologies | P CH MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-1.25A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):275mohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs Typ:-1V,Power Dissipation Pd:1.25W RoHS Compliant: Yes | 0 | |
| SI2309DS-T1-GE3 DISTI # 84R8025 | Vishay Intertechnologies | P CHANNEL MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-1.25A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.275ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1V,Power Dissipation Pd:1.25W RoHS Compliant: Yes | 0 | |
| SI2309DS-T1-E3 DISTI # 70026067 | Vishay Siliconix | MOSFET,Power,P-Ch,VDSS -60V,RDS(ON) 0.275Ohm,ID -1.25A,TO-236 (SOT-23),PD 1.25W RoHS: Compliant | 0 |
|
| SI2309DS-T1 DISTI # 781-SI2309DS | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3 RoHS: Not compliant | 0 | |
| SI2309DS-T1-E3 DISTI # 781-SI2309DS-E3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3 RoHS: Compliant | 0 | |
| SI2309DS-T1-GE3 DISTI # 781-SI2309DS-GE3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3 RoHS: Compliant | 0 | |
| SI2309DS-T1 | Vishay Intertechnologies | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.00125A I(D), 60V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236 | 1272 |
|
| SI2309DS-T1 | Vishay Intertechnologies | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.00125A I(D), 60V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236 | 1581 |
|
| SI2309DST1 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 0.00125A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 RoHS: Not Compliant | 2505 |
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: SI2301ADS-E3 OMO.#: OMO-SI2301ADS-E3-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: SI2301ADST1 OMO.#: OMO-SI2301ADST1-1190 |
Жаңа және түпнұсқа |
|
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Mfr.#: SI2302CDS OMO.#: OMO-SI2302CDS-1190 |
Жаңа және түпнұсқа |
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Mfr.#: SI2304DS/DG+215 OMO.#: OMO-SI2304DS-DG-215-1190 |
Жаңа және түпнұсқа |
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Mfr.#: SI2307 A7SHB OMO.#: OMO-SI2307-A7SHB-1190 |
Жаңа және түпнұсқа |
|
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Mfr.#: SI2307DS-T1 OMO.#: OMO-SI2307DS-T1-1190 |
MOSFET RECOMMENDED ALT 781-SI2307BDS-E3 |
|
Mfr.#: SI2308BDS-T1-E3 OMO.#: OMO-SI2308BDS-T1-E3-VISHAY |
MOSFET N-CH 60V 2.3A SOT23-3 |
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|
Mfr.#: SI2308DS-T1-ES , MAX6425 |
Жаңа және түпнұсқа |
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Mfr.#: SI2309DS-TI OMO.#: OMO-SI2309DS-TI-1190 |
Жаңа және түпнұсқа |
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Mfr.#: SI2308BDS-T1-E3-CUT TAPE |
Жаңа және түпнұсқа |