RQ6E08

RQ6E080AJTCR vs RQ6E080AJ vs RQ6E085BN

 
PartNumberRQ6E080AJTCRRQ6E080AJRQ6E085BN
DescriptionMOSFET NCH 30V 8A POWER
ManufacturerROHM Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-457T-6--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current8 A--
Rds On Drain Source Resistance16.5 mOhms--
Vgs th Gate Source Threshold Voltage500 mV--
Vgs Gate Source Voltage12 V--
Qg Gate Charge16.2 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.25 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Transistor Type1 N-Channel--
BrandROHM Semiconductor--
Fall Time22 ns--
Product TypeMOSFET--
Rise Time16 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time65 ns--
Typical Turn On Delay Time20 ns--
Part # AliasesRQ6E080AJ--
Өндіруші Бөлім № Сипаттама RFQ
RQ6E080AJTCR MOSFET NCH 30V 8A POWER
RQ6E085BNTCR MOSFET Nch 30V 8.5A Si MOSFET
RQ6E080AJ Жаңа және түпнұсқа
RQ6E085BN Жаңа және түпнұсқа
RQ6E085BNTCR NCH 30V 8.5A MIDDLE POWER MOSFET
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