 |  |  | |
| PartNumber | R6030ENZ1C9 | R6030ENZ4C13 | R6030ENZ1 |
| Description | MOSFET 10V Drive Nch MOSFET | MOSFET NCH 600V 30A POWER MOSFET | |
| Manufacturer | ROHM Semiconductor | ROHM Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-247-3 | TO-247-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
| Id Continuous Drain Current | 30 A | 30 A | - |
| Rds On Drain Source Resistance | 115 mOhms | 130 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 85 nC | 85 nC | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 120 W | 305 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Tube | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | ROHM Semiconductor | ROHM Semiconductor | - |
| Forward Transconductance Min | 8 S | - | - |
| Fall Time | 60 ns | 60 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 55 ns | 55 ns | - |
| Factory Pack Quantity | 450 | 30 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 190 ns | 190 ns | - |
| Typical Turn On Delay Time | 40 ns | 40 ns | - |
| Part # Aliases | R6030ENZ1 | - | - |
| Unit Weight | 0.000353 oz | - | - |
| Minimum Operating Temperature | - | - 55 C | - |