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| PartNumber | R6030ENZ1C9 | R6030ENX | R6030ENZ4C13 |
| Description | MOSFET 10V Drive Nch MOSFET | MOSFET 10V Drive Nch MOSFET | MOSFET NCH 600V 30A POWER MOSFET |
| Manufacturer | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-220FP-3 | TO-247-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
| Id Continuous Drain Current | 30 A | 30 A | 30 A |
| Rds On Drain Source Resistance | 115 mOhms | 115 mOhms | 130 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 85 nC | 85 nC | 85 nC |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 120 W | 86 W | 305 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Tube |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor |
| Forward Transconductance Min | 8 S | - | - |
| Fall Time | 60 ns | 60 ns | 60 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 55 ns | 55 ns | 55 ns |
| Factory Pack Quantity | 450 | 500 | 30 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 190 ns | 190 ns | 190 ns |
| Typical Turn On Delay Time | 40 ns | 40 ns | 40 ns |
| Part # Aliases | R6030ENZ1 | R6030ENX | - |
| Unit Weight | 0.000353 oz | 0.090478 oz | - |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Height | - | 15.4 mm | - |
| Length | - | 10.3 mm | - |
| Series | - | Super Junction-MOS EN | - |
| Width | - | 4.8 mm | - |