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| PartNumber | NVD5805NT4G | NVD5805NT4G-VF01 | NVD5805N |
| Description | MOSFET NFET DPAK 40V 51A 9.5MOHM | MOSFET NFET DPAK 40V 51A 9.5MOHM | |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | DPAK-3 | - |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
| Id Continuous Drain Current | 51 A | 51 A | - |
| Rds On Drain Source Resistance | 9.5 mOhms | 9.5 mOhms | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | Reel |
| Series | NTD5805N | - | NTD5805N |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.139332 oz | - | 0.139332 oz |
| Number of Channels | - | 1 Channel | - |
| Vgs th Gate Source Threshold Voltage | - | 1.5 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 80 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Pd Power Dissipation | - | 47 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Forward Transconductance Min | - | 8.54 S | - |
| Fall Time | - | 4.5 ns | - |
| Rise Time | - | 17.9 ns | - |
| Typical Turn Off Delay Time | - | 22.9 ns | - |
| Typical Turn On Delay Time | - | 10.2 ns | - |
| Package Case | - | - | TO-252-3 |
| Id Continuous Drain Current | - | - | 51 A |
| Vds Drain Source Breakdown Voltage | - | - | 40 V |
| Rds On Drain Source Resistance | - | - | 9.5 mOhms |