PartNumber | NPT2021 | NPT2010 | NPT2019 |
Description | RF JFET Transistors DC-2.5GHz 45W Gain 16.5dB GaN HEMT | RF POWER TRANSISTOR | RF POWER TRANSISTOR |
Manufacturer | MACOM | - | - |
Product Category | RF JFET Transistors | - | - |
RoHS | Y | - | - |
Transistor Type | HEMT | - | - |
Technology | GaN Si | - | - |
Gain | 14.2 dB | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 160 V | - | - |
Vgs Gate Source Breakdown Voltage | 3 V | - | - |
Id Continuous Drain Current | 14 mA | - | - |
Output Power | 45 W | - | - |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 85 C | - | - |
Mounting Style | Screw Mount | - | - |
Package / Case | TO-272 | - | - |
Packaging | Tray | - | - |
Configuration | Single | - | - |
Operating Frequency | 2.5 GHz | - | - |
Operating Temperature Range | - 40 C to + 85 C | - | - |
Brand | MACOM | - | - |
Moisture Sensitive | Yes | - | - |
Product Type | RF JFET Transistors | - | - |
Rds On Drain Source Resistance | 340 mOhms | - | - |
Factory Pack Quantity | 25 | - | - |
Subcategory | Transistors | - | - |
Vgs th Gate Source Threshold Voltage | - 1.8 V | - | - |
Unit Weight | 0.067412 oz | - | - |