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IXTY1N1

IXTY1N100P-TRL vs IXTY1N120P vs IXTY1N100P

 
PartNumberIXTY1N100P-TRLIXTY1N120PIXTY1N100P
DescriptionDiscrete Semiconductor Modules Polar Power MOSFETMOSFET N-CH 1200V 1A TO-252MOSFET 1 Amps 1000V 14 Rds
ManufacturerIXYS-IXYS
Product CategoryDiscrete Semiconductor Modules-Transistors - FETs, MOSFETs - Single
RoHSY--
ProductPower MOSFET Modules--
TypePolar--
Vgs Gate Source Voltage20 V--
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTO-252-3--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
PackagingReel-Tube
ConfigurationSingle-Single
BrandIXYS--
Transistor PolarityN-Channel-N-Channel
Fall Time24 ns-24 ns
Id Continuous Drain Current1 A--
Pd Power Dissipation50 W--
Product TypeDiscrete Semiconductor Modules--
Rds On Drain Source Resistance15 Ohms--
Rise Time26 ns-26 ns
Factory Pack Quantity2500--
SubcategoryDiscrete Semiconductor Modules--
TradenamePolar--
Typical Turn Off Delay Time55 ns-55 ns
Typical Turn On Delay Time20 ns-20 ns
Vds Drain Source Breakdown Voltage1000 V--
Vgs th Gate Source Threshold Voltage2.5 V--
Series--IXTY1N100
Unit Weight--0.012346 oz
Package Case--TO-252-3
Technology--Si
Number of Channels--1 Channel
Transistor Type--1 N-Channel
Pd Power Dissipation--50 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--1 A
Vds Drain Source Breakdown Voltage--1000 V
Rds On Drain Source Resistance--15 Ohms
Channel Mode--Enhancement
Өндіруші Бөлім № Сипаттама RFQ
Littelfuse
Littelfuse 		IXTY1N120PTRL Discrete Semiconductor Modules Disc Mosfet N-CH Std-Polar TO-252D
IXTY1N100P-TRL Discrete Semiconductor Modules Polar Power MOSFET
IXTY1N120P MOSFET N-CH 1200V 1A TO-252
IXTY1N100P MOSFET 1 Amps 1000V 14 Rds
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