IXTY1N

IXTY1N120PTRL vs IXTY1N100P-TRL vs IXTY1N80

 
PartNumberIXTY1N120PTRLIXTY1N100P-TRLIXTY1N80
DescriptionDiscrete Semiconductor Modules Disc Mosfet N-CH Std-Polar TO-252DDiscrete Semiconductor Modules Polar Power MOSFETMOSFET 1 Amps 800 V 11 W Rds
ManufacturerIXYSIXYSIXYS
Product CategoryDiscrete Semiconductor ModulesDiscrete Semiconductor ModulesMOSFET
RoHSYYY
ProductPower MOSFET ModulesPower MOSFET Modules-
TypePolarPolar-
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3TO-252-3
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
PackagingReelReelTube
ConfigurationSingleSingleSingle
BrandIXYSIXYSIXYS
Transistor PolarityN-ChannelN-ChannelN-Channel
Product TypeDiscrete Semiconductor ModulesDiscrete Semiconductor ModulesMOSFET
Factory Pack Quantity2500250070
SubcategoryDiscrete Semiconductor ModulesDiscrete Semiconductor ModulesMOSFETs
Vgs Gate Source Voltage-20 V20 V
Fall Time-24 ns28 ns
Id Continuous Drain Current-1 A1 A
Pd Power Dissipation-50 W40 W
Rds On Drain Source Resistance-15 Ohms11 Ohms
Rise Time-26 ns19 ns
Tradename-Polar-
Typical Turn Off Delay Time-55 ns40 ns
Typical Turn On Delay Time-20 ns11 ns
Vds Drain Source Breakdown Voltage-1000 V800 V
Vgs th Gate Source Threshold Voltage-2.5 V-
Technology--Si
Number of Channels--1 Channel
Channel Mode--Enhancement
Height--2.38 mm
Length--6.73 mm
Series--IXTY1N80
Transistor Type--1 N-Channel
Width--6.22 mm
Unit Weight--0.012346 oz
Өндіруші Бөлім № Сипаттама RFQ
Littelfuse
Littelfuse
IXTY1N80P-TRL Discrete Semiconductor Modules Polar Power MOSFET
IXTY1N120PTRL Discrete Semiconductor Modules Disc Mosfet N-CH Std-Polar TO-252D
IXTY1N100P-TRL Discrete Semiconductor Modules Polar Power MOSFET
IXTY1N80P MOSFET POLAR MOSFET WITH REDUCED RDS 800V 1A
IXTY1N80 MOSFET 1 Amps 800 V 11 W Rds
IXTY1N120P MOSFET N-CH 1200V 1A TO-252
IXTY1N80 MOSFET 1 Amps 800 V 11 W Rds
IXTY1N80P MOSFET POLAR MOSFET WITH REDUCED RDS 800V 1A
IXTY1N100P MOSFET 1 Amps 1000V 14 Rds
Top