 |  | | |
| PartNumber | IRG7S313UTRLPBF | IRG7S313U | IRG7S313UTRL |
| Description | MOSFET 330V 40A D2PAK | ||
| Manufacturer | Infineon | IR | Infineon Technologies |
| Product Category | MOSFET | IGBTs - Single | IGBTs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 330 V | - | - |
| Id Continuous Drain Current | 44 A | - | - |
| Vgs th Gate Source Threshold Voltage | 4.7 V | - | - |
| Qg Gate Charge | 33 nC | - | - |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 78 W | - | - |
| Configuration | Single | - | Single |
| Packaging | Reel | - | Digi-ReelR |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 6.22 mm | - | - |
| Brand | Infineon / IR | - | - |
| Forward Transconductance Min | 47 S | - | - |
| Fall Time | 68 ns | - | 68 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 13 ns | - | 13 ns |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SP001537462 | - | - |
| Unit Weight | 0.139332 oz | - | 0.139332 oz |
| Series | - | - | - |
| Package Case | - | - | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Input Type | - | - | Standard |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | D2PAK |
| Power Max | - | - | 78W |
| Reverse Recovery Time trr | - | - | - |
| Current Collector Ic Max | - | - | 40A |
| Voltage Collector Emitter Breakdown Max | - | - | 330V |
| IGBT Type | - | - | Trench |
| Current Collector Pulsed Icm | - | - | - |
| Vce on Max Vge Ic | - | - | 2.14V @ 15V, 60A |
| Switching Energy | - | - | - |
| Gate Charge | - | - | 33nC |
| Td on off 25°C | - | - | 1ns/65ns |
| Test Condition | - | - | 196V, 12A, 10 Ohm |
| Pd Power Dissipation | - | - | 78 W |
| Id Continuous Drain Current | - | - | 44 A |
| Vds Drain Source Breakdown Voltage | - | - | 330 V |
| Vgs th Gate Source Threshold Voltage | - | - | 4.7 V |
| Qg Gate Charge | - | - | 33 nC |
| Forward Transconductance Min | - | - | 47 S |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Infineon / IR |
IRG7S313UTRLPBF | MOSFET 330V 40A D2PAK | |
Infineon Technologies |
IRG7S313UTRLPBF | IGBT Transistors MOSFET 330V 40A D2PAK | |
| IRG7S313U | Жаңа және түпнұсқа | ||
| IRG7S313UTRL | Жаңа және түпнұсқа | ||
| IRG7S313U G7S313U | Жаңа және түпнұсқа | ||
| IRG7S313UPBF | IGBT,N CHANNEL,330V,40A,D2PAK, DC Collector Current:40A, Collector Emitter Saturation Voltage Vce(on):2.14V, Power Dissipation Pd:78W, Collector Emitter Voltage V(br)ceo:330V, No. of Pins:3Pins, |