| PartNumber | IRF3710STRLPBF | IRF3710STRRPBF | IRF3710STRR |
| Description | MOSFET MOSFT 100V 57A 23mOhm 86.7nC | MOSFET 100V 1 N-CH HEXFET 23mOhms 86.7nC | MOSFET N-CH 100V 57A D2PAK |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | D2PAK-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 57 A | 57 A | - |
| Rds On Drain Source Resistance | 23 mOhms | 23 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 130 nC | 86.7 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 200 W | 3.8 W | - |
| Configuration | Single | Single | - |
| Packaging | Reel | Reel | - |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 32 S | - | - |
| Fall Time | 47 ns | 47 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 58 ns | 58 ns | - |
| Factory Pack Quantity | 800 | 800 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 45 ns | 45 ns | - |
| Typical Turn On Delay Time | 12 ns | 12 ns | - |
| Part # Aliases | SP001553984 | SP001561740 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Channel Mode | - | Enhancement | - |
| Type | - | HEXFET Power MOSFET | - |