IPB009N03L

IPB009N03LGATMA1 vs IPB009N03L G

 
PartNumberIPB009N03LGATMA1IPB009N03L G
DescriptionMOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTO-263-7TO-263-7
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V
Id Continuous Drain Current180 A180 A
Rds On Drain Source Resistance700 mOhms700 mOhms
Vgs th Gate Source Threshold Voltage1 V1 V
Vgs Gate Source Voltage20 V20 V
Qg Gate Charge227 nC227 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C
Pd Power Dissipation250 W250 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameOptiMOSOptiMOS
PackagingReelReel
Height4.4 mm4.4 mm
Length10 mm10 mm
SeriesOptiMOS 3OptiMOS 3
Transistor Type1 N-Channel1 N-Channel
Width9.25 mm9.25 mm
BrandInfineon TechnologiesInfineon Technologies
Forward Transconductance Min180 S180 S
Fall Time22 ns22 ns
Product TypeMOSFETMOSFET
Rise Time14 ns14 ns
Factory Pack Quantity10001000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time103 ns103 ns
Typical Turn On Delay Time26 ns26 ns
Part # AliasesG IPB009N03L IPB9N3LGXT SP000394657IPB009N03LGATMA1 IPB9N3LGXT SP000394657
Unit Weight-0.056438 oz
Өндіруші Бөлім № Сипаттама RFQ
Infineon Technologies
Infineon Technologies
IPB009N03LGATMA1 MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
IPB009N03L G MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
IPB009N03LGATMA1 MOSFET N-CH 30V 180A TO263-7
IPB009N03L G Trans MOSFET N-CH 30V 180A 7-Pin TO-263 T/R (Alt: IPB009N03L G)
IPB009N03L Жаңа және түпнұсқа
IPB009N03LG MOSFET N-CH 30V 180A OPTIMOS3 TO263-7, RL
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