IPB009N03L G

IPB009N03L G
Mfr. #:
IPB009N03L G
Өндіруші:
Infineon Technologies
Сипаттама:
Trans MOSFET N-CH 30V 180A 7-Pin TO-263 T/R (Alt: IPB009N03L G)
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IPB009N03L G Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
IPB009N03L G Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші
INFINEON
Өнім санаты
FETs - жалғыз
Сериялар
OptiMOS 3
Қаптама
Ролик
Бөлік бүркеншік аттар
IPB009N03LGATMA1 IPB009N03LGXT SP000394657
Бірлік-салмағы
0.056438 oz
Монтаждау стилі
SMD/SMT
Сауда атауы
OptiMOS
Пакет-қорап
TO-263-7
Технология
Си
Арналар саны
1 Channel
Конфигурация
Бір квинт көзі
Транзистор түрі
1 N-Channel
Pd-қуат-диссипация
250 W
Максималды-жұмыс температурасы
+ 175 C
Ең төменгі жұмыс температурасы
- 55 C
Күз уақыты
22 ns
Көтерілу уақыты
14 ns
Vgs-қақпа-көзі-кернеу
20 V
Id-үздіксіз-ағызу-ток
180 A
Vds-ағызу-көз-бұзу-кернеу
30 V
Rds-On-Drain-Source-Resistance
700 mOhms
Транзистор-полярлық
N-арна
Әдеттегі-өшіру-кідірту уақыты
103 ns
Әдеттегі-қосу-кешігу-уақыты
26 ns
Арна режимі
Жақсарту
Tags
IPB009N03LG, IPB00, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Бөлім № Mfg. Сипаттама Қор Бағасы
IPB009N03LGATMA1
DISTI # V72:2272_06377968
Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant
1353
  • 1000:$1.7480
  • 500:$2.1340
  • 250:$2.2700
  • 100:$2.4310
  • 25:$2.5250
  • 10:$2.8060
  • 1:$3.6278
IPB009N03LGATMA1
DISTI # V36:1790_06377968
Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant
0
  • 1000000:$1.4610
  • 500000:$1.4630
  • 100000:$1.5960
  • 10000:$1.8090
  • 1000:$1.8440
IPB009N03LGATMA1
DISTI # IPB009N03LGATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 30V 180A TO263-7
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1384In Stock
  • 500:$2.2522
  • 100:$2.6457
  • 10:$3.2290
  • 1:$3.6000
IPB009N03LGATMA1
DISTI # IPB009N03LGATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 30V 180A TO263-7
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1384In Stock
  • 500:$2.2522
  • 100:$2.6457
  • 10:$3.2290
  • 1:$3.6000
IPB009N03LGATMA1
DISTI # IPB009N03LGATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 30V 180A TO263-7
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
On Order
  • 5000:$1.6861
  • 2000:$1.7519
  • 1000:$1.8441
IPB009N03LGATMA1
DISTI # 26194931
Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant
1353
  • 4:$3.6278
IPB009N03LGXT
DISTI # IPB009N03LGATMA1
Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin(6+Tab) TO-263 - Tape and Reel (Alt: IPB009N03LGATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 1000
  • 10000:$1.5940
  • 6000:$1.6229
  • 4000:$1.6794
  • 2000:$1.7424
  • 1000:$1.8076
IPB009N03L G
DISTI # IPB009N03L G
Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin TO-263 T/R (Alt: IPB009N03L G)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Asia - 0
  • 50000:$1.5880
  • 25000:$1.6083
  • 10000:$1.6292
  • 5000:$1.6507
  • 3000:$1.6953
  • 2000:$1.7424
  • 1000:$1.7921
IPB009N03LGATMA1
DISTI # SP000394657
Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin TO-263 T/R (Alt: SP000394657)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
  • 10000:€1.2900
  • 6000:€1.3900
  • 4000:€1.4900
  • 2000:€1.5900
  • 1000:€1.8900
IPB009N03LGATMA1.
DISTI # 15AC3078
Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:30V,On Resistance Rds(on):700µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:-,Power Dissipation Pd:250W,No. of Pins:7Pins RoHS Compliant: Yes0
  • 10000:$1.6000
  • 6000:$1.6300
  • 4000:$1.6800
  • 2000:$1.7500
  • 1:$1.8100
IPB009N03L G
DISTI # 726-IPB009N03LG
Infineon Technologies AGMOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
RoHS: Compliant
466
  • 1:$3.3200
  • 10:$2.8200
  • 100:$2.4400
  • 250:$2.3200
  • 500:$2.0800
  • 1000:$1.7500
  • 2000:$1.6600
  • 5000:$1.6000
IPB009N03LGATMA1
DISTI # 726-IPB009N03LGATMA1
Infineon Technologies AGMOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
RoHS: Compliant
900
  • 1:$3.3200
  • 10:$2.8200
  • 100:$2.4400
  • 250:$2.3200
  • 500:$2.0800
  • 1000:$1.7500
  • 2000:$1.6600
  • 5000:$1.6000
IPB009N03LGATMA1
DISTI # 7545406P
Infineon Technologies AGMOSFET N-CH 30V 180A OPTIMOS3 TO263-7, RL895
  • 500:£1.5200
  • 250:£1.6900
  • 50:£1.8700
  • 10:£2.0500
IPB009N03LGInfineon Technologies AG 98
  • 3:$2.4600
  • 10:$1.8450
  • 29:$1.5375
IPB009N03LGInfineon Technologies AG180 A, 30 V, 0.0013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AA89
  • 39:$1.5000
  • 11:$2.0000
  • 1:$3.0000
IPB009N03LGInfineon Technologies AG180 A, 30 V, 0.0013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AA78
  • 38:$1.2300
  • 11:$2.0500
  • 1:$3.2800
IPB009N03L G
DISTI # TMOSP8652
Infineon Technologies AGN-CH30V 180A1mOhm TO263-3
RoHS: Compliant
Stock DE - 50Stock HK - 0Stock US - 0
  • 1000:$2.2600
  • 2000:$1.7400
IPB009N03LGATMA1
DISTI # 1775514
Infineon Technologies AGMOSFET, N CH, 180A, 30V, PG-TO263-71885
  • 500:£1.5300
  • 250:£1.7000
  • 100:£1.7900
  • 10:£2.0600
  • 1:£2.8800
IPB009N03LGATMA1
DISTI # 1775514
Infineon Technologies AGMOSFET, N CH, 180A, 30V, PG-TO263-7
RoHS: Compliant
500
  • 2000:$2.5000
  • 1000:$2.6400
  • 500:$3.1300
  • 250:$3.5000
  • 100:$3.6800
  • 10:$4.2500
  • 1:$5.0000
Сурет Бөлім № Сипаттама
IPB009N03LGATMA1

Mfr.#: IPB009N03LGATMA1

OMO.#: OMO-IPB009N03LGATMA1

MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
IPB009N03L G

Mfr.#: IPB009N03L G

OMO.#: OMO-IPB009N03L-G

MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
IPB009N03LGATMA1

Mfr.#: IPB009N03LGATMA1

OMO.#: OMO-IPB009N03LGATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 30V 180A TO263-7
IPB009N03L

Mfr.#: IPB009N03L

OMO.#: OMO-IPB009N03L-1190

Жаңа және түпнұсқа
IPB009N03L G

Mfr.#: IPB009N03L G

OMO.#: OMO-IPB009N03L-G-1190

Trans MOSFET N-CH 30V 180A 7-Pin TO-263 T/R (Alt: IPB009N03L G)
IPB009N03LG

Mfr.#: IPB009N03LG

OMO.#: OMO-IPB009N03LG-1190

MOSFET N-CH 30V 180A OPTIMOS3 TO263-7, RL
Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
2500
Саны енгізіңіз:
IPB009N03L G ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
2,40 $
2,40 $
10
2,28 $
22,80 $
100
2,16 $
216,00 $
500
2,04 $
1 020,00 $
1000
1,92 $
1 920,00 $
2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
-ден бастаңыз
Ең жаңа өнімдер
  • IR1167S SmartRectifier™ Control IC
    IR1167S SmartRectifier is a secondary side-driver IC designed to drive N-Channel power MOSFETs, used as synchronous rectifiers in isolated Flyback converters
  • Compare IPB009N03L G
    IPB009N03L vs IPB009N03LG vs IPB009N03LGATMA1
  • XDPL8218 Voltage Flyback IC
    Infineon's XDPL8218 is a configurable single-stage SSR flyback controller with high power factor, standby power performance, and constant voltage output.
  • High Current IR3847 Gen3 SupIRBuck®
    IR3847 features a proprietary modulator scheme that reduces jitter by 90% compared to standard solutions
  • IR3823 Integrated Voltage Regulator
    Featuring constant frequency and virtually jitter-free operation with synchronization capability, the new device is well suited to noise-sensitive applications.
  • µIPM™ Integrated Power Module
    µIPM modules are the smallest in the industry, making them suitable for applications that are space-constrained
Top