IPA02

IPA028N08N3 G vs IPA028N08N3GXKSA1 vs IPA023N04NM3SXKSA1

 
PartNumberIPA028N08N3 GIPA028N08N3GXKSA1IPA023N04NM3SXKSA1
DescriptionMOSFET N-Ch 80V 89A TO220FP-3MOSFET N-Ch 80V 89A TO220FP-3MOSFET
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220FP-3TO-220FP-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage80 V80 V-
Id Continuous Drain Current89 A89 A-
Rds On Drain Source Resistance2.4 mOhms2.4 mOhms-
Vgs th Gate Source Threshold Voltage2 V2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge206 nC206 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation42 W42 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingTubeTubeTube
Height16.15 mm16.15 mm-
Length10.65 mm10.65 mm-
SeriesOptiMOS 3OptiMOS 3-
Transistor Type1 N-Channel1 N-Channel-
Width4.85 mm4.85 mm-
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Forward Transconductance Min89 S89 S-
Fall Time26 ns26 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time59 ns59 ns-
Factory Pack Quantity500500500
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time77 ns77 ns-
Typical Turn On Delay Time30 ns30 ns-
Part # AliasesIPA028N08N3GXKSA1 IPA28N8N3GXK SP000446770G IPA028N08N3 IPA28N8N3GXK SP000446770IPA023N04NM3S SP001953004
Unit Weight0.211644 oz0.211644 oz-
Өндіруші Бөлім № Сипаттама RFQ
Infineon Technologies
Infineon Technologies
IPA028N08N3 G MOSFET N-Ch 80V 89A TO220FP-3
IPA028N08N3GXKSA1 MOSFET N-Ch 80V 89A TO220FP-3
IPA029N06NXKSA1 MOSFET MV POWER MOS
IPA023N04NM3SXKSA1 MOSFET
IPA029N06NM5SXKSA1 MOSFET
IPA028N08N3GXKSA1 MOSFET N-CH 80V 89A TO220-3
IPA029N06NXKSA1 MOSFET MV POWER MOS
IPA028N08N3GXK Trans MOSFET N-CH 80V 89A 3-Pin(3+Tab) TO-220FP Tube - Rail/Tube (Alt: IPA028N08N3GXKSA1)
IPA020213TDOKJ Жаңа және түпнұсқа
IPA028N08N3 Жаңа және түпнұсқа
IPA028N08N3G Power Field-Effect Transistor, 89A I(D), 80V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IPA029N06N OptiMOS Power-Transistor, 60 V
IPA028N08N3 G Darlington Transistors MOSFET N-Ch 80V 89A TO220FP-3
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