PartNumber | GS66502B-E01-MR | GS66506T-E01-MR | GS66504B-E01-MR |
Description | MOSFET 650V Enhancement Mode Transistor | MOSFET 650V 22A E-Mode GaN | MOSFET 650V 15A E-Mode GaN |
Manufacturer | GaN Systems | GaN Systems | GaN Systems |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | GaN | GaN | GaN |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | GaNPX-3 | GaNPX-4 | GaNPX-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | 650 V | 650 V |
Id Continuous Drain Current | 7.5 A | 22.5 A | 45 A |
Rds On Drain Source Resistance | 200 mOhms | 67 mOhms | 100 mOhms |
Vgs th Gate Source Threshold Voltage | 1.3 V | 1.3 V | 1.3 V |
Vgs Gate Source Voltage | 7 V | 7 V | 7 V |
Qg Gate Charge | 1.5 nC | 4.4 nC | 6.2 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Reel |
Height | 0.51 mm | 0.54 mm | 0.51 mm |
Length | 6.6 mm | 5.5 mm | 6.6 mm |
Product | MOSFET | MOSFET | MOSFET |
Series | GS6650x | GS6650x | GS6650x |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 5 mm | 4.5 mm | 5 mm |
Brand | GaN Systems | GaN Systems | GaN Systems |
Moisture Sensitive | Yes | Yes | Yes |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 250 | 250 | 250 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | GS66502B-E01-MR | GS66506T-E01-MR | GS66504B-E01-MR |